FR2448213A1 - Conducteur electrique et procede de fabrication d'un tel conducteur - Google Patents
Conducteur electrique et procede de fabrication d'un tel conducteurInfo
- Publication number
- FR2448213A1 FR2448213A1 FR8002434A FR8002434A FR2448213A1 FR 2448213 A1 FR2448213 A1 FR 2448213A1 FR 8002434 A FR8002434 A FR 8002434A FR 8002434 A FR8002434 A FR 8002434A FR 2448213 A1 FR2448213 A1 FR 2448213A1
- Authority
- FR
- France
- Prior art keywords
- conductor
- manufacturing
- plasma
- discharge
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- -1 SULFUR NITRIDE Chemical class 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'INVENTION A POUR OBJET UN PROCEDE ET UN APPAREIL DE DEPOT D'UNE MATIERE CONDUCTRICE AMORPHE SOLIDE PAR DECHARGE AU PLASMA OU AUX EFFLUVES. ON DEPOSE SUR UN SUBSTRAT 18 UNE PELLICULE D'UNE MATIERE CONDUCTRICE AMORPHE SOLIDE 48 QUI COMPREND NOTAMMENT UN POLYMERE DE NITRURE DE SOUFRE AMORPHE SN. ON EFFECTUE AVANTAGEUSEMENT LE DEPOT SULFHYDRIQUE HS, PAR DECHARGE AU PLASMA OU AUX EFFLUVES, DANS UN VIDE PARTIEL AYANT UNE ATMOSPHERE CONTENANT DE L'AMMONIAC OU DE L'AZOTE ET, LE CAS ECHEANT, DU FLUOR.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US906879A | 1979-02-05 | 1979-02-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2448213A1 true FR2448213A1 (fr) | 1980-08-29 |
Family
ID=21735393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8002434A Withdrawn FR2448213A1 (fr) | 1979-02-05 | 1980-02-05 | Conducteur electrique et procede de fabrication d'un tel conducteur |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS55123125A (fr) |
AU (1) | AU5521280A (fr) |
BE (1) | BE881551A (fr) |
DE (1) | DE3004009A1 (fr) |
FR (1) | FR2448213A1 (fr) |
GB (1) | GB2042488A (fr) |
IT (1) | IT1129615B (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153160A (en) * | 1981-03-16 | 1982-09-21 | Sanyo Electric Co Ltd | Solar beam energy transducer |
DE3512196A1 (de) * | 1985-04-03 | 1986-10-16 | Hartmann & Braun Ag, 6000 Frankfurt | Verfahren zum aufbringen duenner schichten auf einem substrat |
JP3191407B2 (ja) * | 1991-08-29 | 2001-07-23 | ソニー株式会社 | 配線形成方法 |
-
1980
- 1980-01-31 GB GB8003229A patent/GB2042488A/en not_active Withdrawn
- 1980-02-01 IT IT19652/80A patent/IT1129615B/it active
- 1980-02-04 DE DE19803004009 patent/DE3004009A1/de not_active Withdrawn
- 1980-02-05 AU AU55212/80A patent/AU5521280A/en not_active Abandoned
- 1980-02-05 FR FR8002434A patent/FR2448213A1/fr not_active Withdrawn
- 1980-02-05 BE BE0/199266A patent/BE881551A/fr unknown
- 1980-02-05 JP JP1294980A patent/JPS55123125A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
AU5521280A (en) | 1980-08-14 |
JPS55123125A (en) | 1980-09-22 |
IT1129615B (it) | 1986-06-11 |
GB2042488A (en) | 1980-09-24 |
BE881551A (fr) | 1980-05-30 |
IT8019652A0 (it) | 1980-02-01 |
DE3004009A1 (de) | 1980-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |