GB853852A - Improvements in or relating to methods of manufacturing electrically conductive films - Google Patents

Improvements in or relating to methods of manufacturing electrically conductive films

Info

Publication number
GB853852A
GB853852A GB4576/57A GB457657A GB853852A GB 853852 A GB853852 A GB 853852A GB 4576/57 A GB4576/57 A GB 4576/57A GB 457657 A GB457657 A GB 457657A GB 853852 A GB853852 A GB 853852A
Authority
GB
United Kingdom
Prior art keywords
base
stream
elements
gas
halides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4576/57A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe dElectronique et dAutomatisme SA
Original Assignee
Societe dElectronique et dAutomatisme SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe dElectronique et dAutomatisme SA filed Critical Societe dElectronique et dAutomatisme SA
Publication of GB853852A publication Critical patent/GB853852A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

Electrically conducting films are produced by mixing the halides of at least two elements, at least 90% of the mixture being a halide of tin, silicon or titanium, the remainder being the halides of at least one of hafnium, bismuth, niobium, tantalum, tungsten, nickel, copper, zinc and vanadium; evaporating such mixture and carrying the halide vapours in a stream of a carrier gas; contacting such gas stream with a dielectric base heated to a temperature high enough to decompose the halides; reacting the freed elements with a reactive gas comprising oxygen, ammonia or a mixture thereof to form oxides and/or nitrides of the elements as a deposit on the base, and removing excess vapour from the vicinity of the base. The reactive gas may be introduced into the gas stream, or may comprise the stream: or the stream may be an inert gas such as hydrogen or nitrogen so that the freed elements are deposited as such on the base, which is then further heated in an atmosphere of the reactive gas: in the former case first oxygen, then ammonia may be introduced so that the oxide formed first is at least partially converted into nitride. The base plate may be of high melting point glass; in order to coat only a part thereof with the conducting film, either the base is first painted with a masking composition where the film is not wanted, or the entire base is coated and unwanted film then removed by chemical action of zinc and hydrochloric acid. An annular track for a sliding-contact potentiometer may be so produced.ALSO:Electrically conducting films are produced by mixing the halides of at least two elements, at least 90% of the mixture being a halide of tin, silicon or titanium, the remainder being the halides of at least one of hafnium, bismuth, niobium, tantalum, tungsten, nickel, copper, zinc and vanadium; evaporating such mixture and carrying the halide vapours in a stream of a carrier gas; contacting such gas stream with a dielectric base heated to a temperature high enough to decompose the halides; reacting the freed elements with a reactive gas comprising oxygen, ammonia or a mixture thereof to form oxides and/or nitrides of the elements as a deposit on the base, and removing excess vapour from the vicinity of the base. The reactive gas may be introduced into the gas stream, or may comprise the stream: or the stream may be an inert gas such as hydrogen or nitrogen so that the freed elements are deposited as such on the base, which is then further heated in an atmosphere of the reactive gas: in the former case first oxygen, then ammonia p may be introduced so that the oxide formed is at least partially converted into nitride. The base plate may be of high melting point glass; in order to coat only a part thereof with the conducting film, either the base is first painted with a masking composition where the film is not wanted, or the entire base is coated and unwanted film then removed by chemical action of zinc and hydrochloric acid. An annular track for a sliding contact potentiometer may be so produced.
GB4576/57A 1956-02-11 1957-02-11 Improvements in or relating to methods of manufacturing electrically conductive films Expired GB853852A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1142646T 1956-02-11

Publications (1)

Publication Number Publication Date
GB853852A true GB853852A (en) 1960-11-09

Family

ID=9643409

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4576/57A Expired GB853852A (en) 1956-02-11 1957-02-11 Improvements in or relating to methods of manufacturing electrically conductive films

Country Status (4)

Country Link
US (1) US3019137A (en)
DE (1) DE1097533B (en)
FR (1) FR1142646A (en)
GB (1) GB853852A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417460A (en) * 1959-04-13 1968-12-24 Onera (Off Nat Aerospatiale) Methods of brazing
CH374871A (en) * 1959-08-05 1964-01-31 Landis & Gyr Ag Process for the production of coatings on heat-resistant substrates
US3131082A (en) * 1962-02-01 1964-04-28 Gen Electric Rare earth-iron garnet preparation
US3200015A (en) * 1962-09-10 1965-08-10 United Aircraft Corp Process for coating high temperature alloys
US3511703A (en) * 1963-09-20 1970-05-12 Motorola Inc Method for depositing mixed oxide films containing aluminum oxide
US3394087A (en) * 1966-02-01 1968-07-23 Irc Inc Glass bonded resistor compositions containing refractory metal nitrides and refractory metal
US3481781A (en) * 1967-03-17 1969-12-02 Rca Corp Silicate glass coating of semiconductor devices
DE2317447C2 (en) * 1973-04-06 1984-11-22 Sandvik Ab, Sandviken Cutting inserts
US4065743A (en) * 1975-03-21 1977-12-27 Trw, Inc. Resistor material, resistor made therefrom and method of making the same
US4239819A (en) * 1978-12-11 1980-12-16 Chemetal Corporation Deposition method and products
JP5645191B2 (en) 2009-04-20 2014-12-24 東芝三菱電機産業システム株式会社 Method for forming metal oxide film and metal oxide film

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US448915A (en) * 1891-03-24 Georg erlwein
US1497417A (en) * 1919-03-31 1924-06-10 Henry C P Weber Process of coating metals
US1891235A (en) * 1929-05-31 1932-12-20 Int Standard Electric Corp Manufacture of magnetic material
US2556991A (en) * 1946-03-20 1951-06-12 Bell Telephone Labor Inc Light-sensitive electric device
GB639561A (en) * 1946-05-02 1950-06-28 Corning Glass Works Improvements in and relating to glass with electrically heated coatings
US2552626A (en) * 1948-02-17 1951-05-15 Bell Telephone Labor Inc Silicon-germanium resistor and method of making it
US2551341A (en) * 1949-11-22 1951-05-01 New Jersey Zinc Co Apparatus for thermal decomposition of metal halides
US2764510A (en) * 1953-01-12 1956-09-25 Int Resistance Co Carbon deposited resistor and method of making the same
US2798140A (en) * 1953-04-06 1957-07-02 Wilbur M Kohring Resistance coatings
US2784115A (en) * 1953-05-04 1957-03-05 Eastman Kodak Co Method of producing titanium dioxide coatings
DE1715969U (en) * 1954-02-24 1956-02-02 Metallgesellschaft Ag HEATING CONDUCTOR.
US2859132A (en) * 1956-05-09 1958-11-04 Ohio Commw Eng Co Gas plating using nitrous oxide

Also Published As

Publication number Publication date
US3019137A (en) 1962-01-30
DE1097533B (en) 1961-01-19
FR1142646A (en) 1957-09-20

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