FR2444990B1 - Montage integre mos permettant la suppression de courants de repos s'ecoulant dans des etages d'attaque de conducteurs de mots de memoires a semiconducteurs - Google Patents

Montage integre mos permettant la suppression de courants de repos s'ecoulant dans des etages d'attaque de conducteurs de mots de memoires a semiconducteurs

Info

Publication number
FR2444990B1
FR2444990B1 FR7930488A FR7930488A FR2444990B1 FR 2444990 B1 FR2444990 B1 FR 2444990B1 FR 7930488 A FR7930488 A FR 7930488A FR 7930488 A FR7930488 A FR 7930488A FR 2444990 B1 FR2444990 B1 FR 2444990B1
Authority
FR
France
Prior art keywords
attack
state
semiconductor memory
currents flowing
memory word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7930488A
Other languages
English (en)
French (fr)
Other versions
FR2444990A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2444990A1 publication Critical patent/FR2444990A1/fr
Application granted granted Critical
Publication of FR2444990B1 publication Critical patent/FR2444990B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
FR7930488A 1978-12-22 1979-12-12 Montage integre mos permettant la suppression de courants de repos s'ecoulant dans des etages d'attaque de conducteurs de mots de memoires a semiconducteurs Expired FR2444990B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2855744A DE2855744C3 (de) 1978-12-22 1978-12-22 MOS-integrierte Schaltungsanordnung zur Unterdrückung von in Wortleitungstreibern von Halbleiterspeicher fließenden Ruheströmen

Publications (2)

Publication Number Publication Date
FR2444990A1 FR2444990A1 (fr) 1980-07-18
FR2444990B1 true FR2444990B1 (fr) 1986-05-09

Family

ID=6058148

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930488A Expired FR2444990B1 (fr) 1978-12-22 1979-12-12 Montage integre mos permettant la suppression de courants de repos s'ecoulant dans des etages d'attaque de conducteurs de mots de memoires a semiconducteurs

Country Status (5)

Country Link
US (1) US4347588A (enExample)
JP (1) JPS5587380A (enExample)
DE (1) DE2855744C3 (enExample)
FR (1) FR2444990B1 (enExample)
GB (1) GB2040631B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56117390A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
JPS57130291A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
JPS58128097A (ja) * 1981-12-29 1983-07-30 Fujitsu Ltd 半導体記憶装置
US4516123A (en) * 1982-12-27 1985-05-07 At&T Bell Laboratories Integrated circuit including logic array with distributed ground connections
JPS6145491A (ja) * 1984-08-10 1986-03-05 Fujitsu Ltd 半導体記憶装置
JP2005039016A (ja) * 2003-07-18 2005-02-10 Toshiba Corp 不揮発性半導体記憶装置、電子カード及び電子装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3965369A (en) * 1972-08-25 1976-06-22 Hitachi, Ltd. MISFET (Metal-insulator-semiconductor field-effect transistor) logical circuit having depletion type load transistor
GB1456608A (en) * 1973-08-23 1976-11-24 Ibm Read only memory
GB1502270A (en) * 1974-10-30 1978-03-01 Hitachi Ltd Word line driver circuit in memory circuit
JPS5914827B2 (ja) * 1976-08-23 1984-04-06 株式会社日立製作所 アドレス選択システム
JPS5939833B2 (ja) * 1977-05-24 1984-09-26 日本電気株式会社 センス増幅器

Also Published As

Publication number Publication date
FR2444990A1 (fr) 1980-07-18
DE2855744C3 (de) 1982-02-18
GB2040631A (en) 1980-08-28
JPS5587380A (en) 1980-07-02
DE2855744A1 (de) 1980-07-17
US4347588A (en) 1982-08-31
DE2855744B2 (enExample) 1981-02-05
GB2040631B (en) 1983-07-20

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Legal Events

Date Code Title Description
ST Notification of lapse