FR2421467A1 - Reseaux logiques non affectes a une fonction particuliere a structures semi-conductrices sous forme de circuits integres - Google Patents

Reseaux logiques non affectes a une fonction particuliere a structures semi-conductrices sous forme de circuits integres

Info

Publication number
FR2421467A1
FR2421467A1 FR7908131A FR7908131A FR2421467A1 FR 2421467 A1 FR2421467 A1 FR 2421467A1 FR 7908131 A FR7908131 A FR 7908131A FR 7908131 A FR7908131 A FR 7908131A FR 2421467 A1 FR2421467 A1 FR 2421467A1
Authority
FR
France
Prior art keywords
transistors
array
committed
logic
contact areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7908131A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RACAL MICROELECT SYSTEM
Original Assignee
RACAL MICROELECT SYSTEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RACAL MICROELECT SYSTEM filed Critical RACAL MICROELECT SYSTEM
Publication of FR2421467A1 publication Critical patent/FR2421467A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

L'invention concerne des réseaux logiques non affectés à une fonction particulière, qui comprennent des structures semiconductrices sous forme de circuits intégrés et elle s'applique plus particulièrement aux problèmes posés par l'accès aux éléments de chaque groupe du réseau et à la concentration en éléments. La structure est formée par un ensemble de groupes formés chacun de transistors qui ne sont pas, ou ne sont que partiellement, interconnectés. Certains des transistors 6A à 6D et 8A à 8D ont leurs régions d'électrodes connectées à des aires de contact accessibles de l'extérieur. Les transistors sont disposés symétriquement dans chaque groupe, et le groupe peut comporter un cercle extérieur de régions de contact 40 à 62 qui peuvent être connectées ensemble deux par deux au moyen de liaisons 64 enterrées sous un substrat isolant 5. Il est ainsi possible d'établir des connexions entre tout couple de transistors, même ceux appartenant à des coins opposés du groupe, la structure de l'invention possédant une excellente concentration en composants.
FR7908131A 1978-04-01 1979-03-30 Reseaux logiques non affectes a une fonction particuliere a structures semi-conductrices sous forme de circuits integres Withdrawn FR2421467A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1282978 1978-04-01

Publications (1)

Publication Number Publication Date
FR2421467A1 true FR2421467A1 (fr) 1979-10-26

Family

ID=10011906

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7908131A Withdrawn FR2421467A1 (fr) 1978-04-01 1979-03-30 Reseaux logiques non affectes a une fonction particuliere a structures semi-conductrices sous forme de circuits integres

Country Status (3)

Country Link
CA (1) CA1116307A (fr)
DE (1) DE2912817A1 (fr)
FR (1) FR2421467A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1571710A (fr) * 1967-06-23 1969-06-20
US3772536A (en) * 1967-09-20 1973-11-13 Trw Inc Digital cell for large scale integration
FR2227638A1 (fr) * 1973-04-30 1974-11-22 Rca Corp
US3999214A (en) * 1974-06-26 1976-12-21 Ibm Corporation Wireable planar integrated circuit chip structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1571710A (fr) * 1967-06-23 1969-06-20
US3772536A (en) * 1967-09-20 1973-11-13 Trw Inc Digital cell for large scale integration
FR2227638A1 (fr) * 1973-04-30 1974-11-22 Rca Corp
US3999214A (en) * 1974-06-26 1976-12-21 Ibm Corporation Wireable planar integrated circuit chip structure

Also Published As

Publication number Publication date
DE2912817A1 (de) 1979-10-11
CA1116307A (fr) 1982-01-12

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Legal Events

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ST Notification of lapse