FR2413788A1 - Structure d'isolation et son application a la realisation d'un thyristor - Google Patents
Structure d'isolation et son application a la realisation d'un thyristorInfo
- Publication number
- FR2413788A1 FR2413788A1 FR7739967A FR7739967A FR2413788A1 FR 2413788 A1 FR2413788 A1 FR 2413788A1 FR 7739967 A FR7739967 A FR 7739967A FR 7739967 A FR7739967 A FR 7739967A FR 2413788 A1 FR2413788 A1 FR 2413788A1
- Authority
- FR
- France
- Prior art keywords
- epitaxial layer
- same polarity
- telephone exchange
- isolation structure
- opposite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002955 isolation Methods 0.000 title abstract 4
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1027—Thyristors
Abstract
STRUCTURE D'ISOLATION PARTICULIEREMENT DESTINEE A ISOLER UN THYRISTOR DESTINE A LA REALISATION D'UNE MATRICE DE POINTS DE COUPLAGE POUR CENTRAL TELEPHONIQUE. LE THYRISTOR COMPREND UNE CATHODE 1, UNE PORTE 2, ET DEUX REGIONS D'ANODE 4 ET 4 RELIEES ENSEMBLE, CES ELEMENTS ETANT DISPOSES DANS UNE CUVETTE DEFINIE PAR DES MURS D'ISOLEMENT 5, ET UNE REGION DE SOUS-COLLECTEUR 3. LA STRUCTURE D'ISOLATION EST CONSTITUEE PAR LA REGION 10 DU MEME TYPE DE CONDUCTIVITE QUE LES REGIONS DE PORTE ET D'ANODE, ET LA REGION 11 DE CONDUCTIVITE OPPOSEE. LA REGION 10 ENTOURE LE THYRISTOR ET VIENT BUTER CONTRE LE SOUS-COLLECTEUR. APPLICATION A L'ISOLATION DE STRUCTURES SEMI-CONDUCTRICES.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7739967A FR2413788A1 (fr) | 1977-12-30 | 1977-12-30 | Structure d'isolation et son application a la realisation d'un thyristor |
JP14346378A JPS5494890A (en) | 1977-12-30 | 1978-11-22 | Separation structure for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7739967A FR2413788A1 (fr) | 1977-12-30 | 1977-12-30 | Structure d'isolation et son application a la realisation d'un thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2413788A1 true FR2413788A1 (fr) | 1979-07-27 |
Family
ID=9199636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7739967A Withdrawn FR2413788A1 (fr) | 1977-12-30 | 1977-12-30 | Structure d'isolation et son application a la realisation d'un thyristor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5494890A (fr) |
FR (1) | FR2413788A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0295097B1 (fr) * | 1987-06-11 | 1993-11-18 | Fairchild Semiconductor Corporation | Fabrication d'une structure semi-conductrice |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3812405A (en) * | 1973-01-29 | 1974-05-21 | Motorola Inc | Stable thyristor device |
US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
US3999215A (en) * | 1972-05-31 | 1976-12-21 | U.S. Philips Corporation | Integrated semiconductor device comprising multi-layer circuit element and short-circuit means |
-
1977
- 1977-12-30 FR FR7739967A patent/FR2413788A1/fr not_active Withdrawn
-
1978
- 1978-11-22 JP JP14346378A patent/JPS5494890A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
US3999215A (en) * | 1972-05-31 | 1976-12-21 | U.S. Philips Corporation | Integrated semiconductor device comprising multi-layer circuit element and short-circuit means |
US3812405A (en) * | 1973-01-29 | 1974-05-21 | Motorola Inc | Stable thyristor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5494890A (en) | 1979-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |