FR2413766A1 - Varistor made from several metal oxide(s) - esp. using substrate made of semiconducting zinc oxide and covered with other oxide(s) - Google Patents
Varistor made from several metal oxide(s) - esp. using substrate made of semiconducting zinc oxide and covered with other oxide(s)Info
- Publication number
- FR2413766A1 FR2413766A1 FR7832823A FR7832823A FR2413766A1 FR 2413766 A1 FR2413766 A1 FR 2413766A1 FR 7832823 A FR7832823 A FR 7832823A FR 7832823 A FR7832823 A FR 7832823A FR 2413766 A1 FR2413766 A1 FR 2413766A1
- Authority
- FR
- France
- Prior art keywords
- oxide
- varistor
- metal oxide
- esp
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The varistor is formed by two separate macro-elements, viz. (a) a base material or ground phase, which is a semiconducting metal oxide; and (b) a metal oxide-, or mixed oxide-phase, producing a phase boundary region (a,b) with a specific concn. profile. Several macro-elements (a,b) may be combined in horizontal and/or vertical stacks. The structure of the macro-elements may be mono- or poly-crystalline, or amorphous; and the pref. material (a) is doped zinc oxide. The electrical properties of the varistor can be accurately adjusted even when using working voltages below 15V; and the varistor is simple to mfr.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD20307578A DD150415A3 (en) | 1978-01-03 | 1978-01-03 | VOLTAGE-RELATED RESISTANCE |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2413766A1 true FR2413766A1 (en) | 1979-07-27 |
FR2413766B3 FR2413766B3 (en) | 1981-09-11 |
Family
ID=5511156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7832823A Granted FR2413766A1 (en) | 1978-01-03 | 1978-11-21 | Varistor made from several metal oxide(s) - esp. using substrate made of semiconducting zinc oxide and covered with other oxide(s) |
Country Status (3)
Country | Link |
---|---|
DD (1) | DD150415A3 (en) |
DE (1) | DE2846385A1 (en) |
FR (1) | FR2413766A1 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3848490A (en) * | 1973-11-02 | 1974-11-19 | Gerber Garment Technology Inc | Method and apparatus for controlling a cutting tool |
US3953371A (en) * | 1973-11-12 | 1976-04-27 | General Electric Company | Controlled grain size metal oxide varistor and process for making |
DE2360962A1 (en) * | 1973-12-06 | 1975-06-12 | Siemens Ag | HIGH RESISTANCE IN A THIN SINGLE CRYSTALLINE SILICONE LAYER |
-
1978
- 1978-01-03 DD DD20307578A patent/DD150415A3/en not_active IP Right Cessation
- 1978-10-25 DE DE19782846385 patent/DE2846385A1/en not_active Withdrawn
- 1978-11-21 FR FR7832823A patent/FR2413766A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DD150415A3 (en) | 1981-09-02 |
FR2413766B3 (en) | 1981-09-11 |
DE2846385A1 (en) | 1979-07-12 |
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