FR2408220A1 - Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique - Google Patents

Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique

Info

Publication number
FR2408220A1
FR2408220A1 FR7831213A FR7831213A FR2408220A1 FR 2408220 A1 FR2408220 A1 FR 2408220A1 FR 7831213 A FR7831213 A FR 7831213A FR 7831213 A FR7831213 A FR 7831213A FR 2408220 A1 FR2408220 A1 FR 2408220A1
Authority
FR
France
Prior art keywords
branch
current
device including
grid
sitl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7831213A
Other languages
English (en)
French (fr)
Other versions
FR2408220B1 (US07709020-20100504-C00041.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Publication of FR2408220A1 publication Critical patent/FR2408220A1/fr
Application granted granted Critical
Publication of FR2408220B1 publication Critical patent/FR2408220B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
FR7831213A 1977-11-05 1978-11-03 Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique Granted FR2408220A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13275677A JPS5466080A (en) 1977-11-05 1977-11-05 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2408220A1 true FR2408220A1 (fr) 1979-06-01
FR2408220B1 FR2408220B1 (US07709020-20100504-C00041.png) 1982-08-27

Family

ID=15088812

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7831213A Granted FR2408220A1 (fr) 1977-11-05 1978-11-03 Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique

Country Status (6)

Country Link
US (1) US4200879A (US07709020-20100504-C00041.png)
JP (1) JPS5466080A (US07709020-20100504-C00041.png)
DE (1) DE2847822A1 (US07709020-20100504-C00041.png)
FR (1) FR2408220A1 (US07709020-20100504-C00041.png)
GB (1) GB2011179B (US07709020-20100504-C00041.png)
NL (1) NL7810677A (US07709020-20100504-C00041.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2397070A1 (fr) * 1977-07-07 1979-02-02 Zaidan Hojin Handotai Kenkyu Transistor a induction, statique et montage comportant de tels transistors

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
US4362981A (en) * 1980-09-12 1982-12-07 Kabushiki Kaisha Daini Seikosha Driving circuit for a stepping motor
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
JP2659931B2 (ja) * 1985-06-29 1997-09-30 財団法人 半導体研究振興会 光制御電力変換装置
US5170229A (en) * 1988-01-16 1992-12-08 Link Analytical Limited Junction field effect transistors with injector region
US5136534A (en) * 1989-06-30 1992-08-04 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
US5192704A (en) * 1989-06-30 1993-03-09 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
USD876693S1 (en) 2017-08-03 2020-02-25 E. Mishan & Sons, Inc. Flashlight baton with crenulate sliding bezel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2335052A1 (fr) * 1975-12-09 1977-07-08 Zaidan Hojin Handotai Kenkyu Circuit integre
GB1480412A (en) * 1973-06-14 1977-07-20 Philips Electronic Associated Arrangements for operating a semiconductor device in a charge storage mode
FR2360994A1 (fr) * 1976-08-03 1978-03-03 Zaidan Hojin Handotai Kenkyu Circuit integre semi-conducteur, logique a transistors a induction statique
FR2381373A1 (fr) * 1977-02-21 1978-09-15 Zaidan Hojin Handotai Kenkyu Memoire semi-conductrice rapide, a grande densite

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3453507A (en) * 1967-04-04 1969-07-01 Honeywell Inc Photo-detector
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
GB1444951A (en) * 1973-06-18 1976-08-04 Mullard Ltd Electronic solid state devices
JPS5510152B2 (US07709020-20100504-C00041.png) * 1974-03-08 1980-03-14
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1480412A (en) * 1973-06-14 1977-07-20 Philips Electronic Associated Arrangements for operating a semiconductor device in a charge storage mode
FR2335052A1 (fr) * 1975-12-09 1977-07-08 Zaidan Hojin Handotai Kenkyu Circuit integre
FR2360994A1 (fr) * 1976-08-03 1978-03-03 Zaidan Hojin Handotai Kenkyu Circuit integre semi-conducteur, logique a transistors a induction statique
FR2381373A1 (fr) * 1977-02-21 1978-09-15 Zaidan Hojin Handotai Kenkyu Memoire semi-conductrice rapide, a grande densite

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2397070A1 (fr) * 1977-07-07 1979-02-02 Zaidan Hojin Handotai Kenkyu Transistor a induction, statique et montage comportant de tels transistors

Also Published As

Publication number Publication date
DE2847822A1 (de) 1979-05-10
US4200879A (en) 1980-04-29
GB2011179A (en) 1979-07-04
DE2847822C2 (US07709020-20100504-C00041.png) 1987-04-02
JPS5466080A (en) 1979-05-28
GB2011179B (en) 1982-06-16
NL7810677A (nl) 1979-05-08
FR2408220B1 (US07709020-20100504-C00041.png) 1982-08-27

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