FR2407571A1 - Dispositif piezoelectrique a couche de selenium - Google Patents

Dispositif piezoelectrique a couche de selenium

Info

Publication number
FR2407571A1
FR2407571A1 FR7732053A FR7732053A FR2407571A1 FR 2407571 A1 FR2407571 A1 FR 2407571A1 FR 7732053 A FR7732053 A FR 7732053A FR 7732053 A FR7732053 A FR 7732053A FR 2407571 A1 FR2407571 A1 FR 2407571A1
Authority
FR
France
Prior art keywords
piezoelectric
piezoelectric device
layer piezoelectric
selenium layer
excitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7732053A
Other languages
English (en)
Other versions
FR2407571B1 (fr
Inventor
Eugene Dieulesaint
Daniel Royer
Richard Guedj
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7732053A priority Critical patent/FR2407571A1/fr
Priority to DE19782846164 priority patent/DE2846164A1/de
Priority to GB7841822A priority patent/GB2009496B/en
Priority to US05/954,079 priority patent/US4209725A/en
Priority to JP13144078A priority patent/JPS54148391A/ja
Publication of FR2407571A1 publication Critical patent/FR2407571A1/fr
Application granted granted Critical
Publication of FR2407571B1 publication Critical patent/FR2407571B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56Monolithic crystal filters
    • H03H9/564Monolithic crystal filters implemented with thin-film techniques
    • GPHYSICS
    • G10MUSICAL INSTRUMENTS; ACOUSTICS
    • G10KSOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/36Devices for manipulating acoustic surface waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02637Details concerning reflective or coupling arrays
    • H03H9/02795Multi-strip couplers as track changers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/0296Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
    • H03H9/02968Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with optical devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30Time-delay networks
    • H03H9/42Time-delay networks using surface acoustic waves
    • H03H9/423Time-delay networks using surface acoustic waves with adjustable delay time
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Multimedia (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'INVENTION SE RAPPORTE AUX DISPOSITIFS PIEZOELECTRIQUES UTILISANT UNE COUCHE PIEZOELECTRIQUE DEPOSEE SUR UN SUBSTRAT DEPOURVU DE PROPRIETES PIEZOELECTRIQUES A LA TEMPERATURE AMBIANTE. L'INVENTION A POUR OBJET UN DISPOSITIF DANS LEQUEL LA COUCHE PIEZOELECTRIQUE EST FAITE D'UN MATERIAU CRISTALLIN MONO-ATOMIQUE, EN L'OCCURENCE DU SELENIUM. L'INVENTION S'APPLIQUE NOTAMMENT A L'EXCITATION D'ONDES ELASTIQUES DE SURFACE LE LONG DES SUBSTRATS NON PIEZOELECTRIQUES, A L'EXCITATION D'ONDES ELASTIQUES DE VOLUME ET A LA DETECTION DES RAYONNEMENTS INFRAROUGES.
FR7732053A 1977-10-25 1977-10-25 Dispositif piezoelectrique a couche de selenium Granted FR2407571A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7732053A FR2407571A1 (fr) 1977-10-25 1977-10-25 Dispositif piezoelectrique a couche de selenium
DE19782846164 DE2846164A1 (de) 1977-10-25 1978-10-24 Piezoelektrische vorrichtung mit selenschicht
GB7841822A GB2009496B (en) 1977-10-25 1978-10-24 Thomson-csf
US05/954,079 US4209725A (en) 1977-10-25 1978-10-24 Selenium layer piezoelectric device
JP13144078A JPS54148391A (en) 1977-10-25 1978-10-25 Piezooelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7732053A FR2407571A1 (fr) 1977-10-25 1977-10-25 Dispositif piezoelectrique a couche de selenium

Publications (2)

Publication Number Publication Date
FR2407571A1 true FR2407571A1 (fr) 1979-05-25
FR2407571B1 FR2407571B1 (fr) 1982-02-19

Family

ID=9196912

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7732053A Granted FR2407571A1 (fr) 1977-10-25 1977-10-25 Dispositif piezoelectrique a couche de selenium

Country Status (5)

Country Link
US (1) US4209725A (fr)
JP (1) JPS54148391A (fr)
DE (1) DE2846164A1 (fr)
FR (1) FR2407571A1 (fr)
GB (1) GB2009496B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4602159A (en) * 1982-08-10 1986-07-22 Matsushita Electric Industrial Co., Ltd. Infrared detector
GB2139442A (en) * 1983-05-05 1984-11-07 Gen Electric Co Plc Surface acoustic wave device
EP0141582B1 (fr) * 1983-10-20 1988-09-07 Plessey Overseas Limited Détecteur pyroélectrique
GB2156619A (en) * 1984-03-22 1985-10-09 Era Patents Ltd Variable surface acoustic wave device
US5220234A (en) * 1992-03-02 1993-06-15 Hewlett-Packard Company Shear transverse wave device having selective trapping of wave energy
JP3243047B2 (ja) * 1993-03-12 2002-01-07 呉羽化学工業株式会社 受波型圧電素子
US6291924B1 (en) * 1999-07-01 2001-09-18 Trw Inc. Adjustable saw device
US7495369B2 (en) * 2005-05-26 2009-02-24 Araz Yacoubian Broadband imager
US8426933B2 (en) * 2008-08-08 2013-04-23 Araz Yacoubian Broad spectral band sensor
CN113193107B (zh) * 2021-04-28 2023-02-28 江西省纳米技术研究院 一种单原子压电材料及其制备方法与应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547596A (en) * 1967-10-12 1970-12-15 Bell Telephone Labor Inc Method for producing substantially trigonal piezoelectric selenium
US3516027A (en) * 1968-08-05 1970-06-02 Us Army Variable surface-wave delay line
FR2101134B1 (fr) * 1970-08-27 1973-11-23 Thomson Csf
US3836876A (en) * 1971-05-05 1974-09-17 Secr Defence Acoustic surface wave devices
FR2220930B1 (fr) * 1973-03-09 1976-05-21 Thomson Csf
FR2271703B1 (fr) * 1973-07-31 1976-09-17 Thomson Csf

Also Published As

Publication number Publication date
US4209725A (en) 1980-06-24
GB2009496B (en) 1982-07-21
DE2846164A1 (de) 1979-05-03
JPS54148391A (en) 1979-11-20
FR2407571B1 (fr) 1982-02-19
GB2009496A (en) 1979-06-13

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Legal Events

Date Code Title Description
ST Notification of lapse