FR2404303B1 - - Google Patents
Info
- Publication number
- FR2404303B1 FR2404303B1 FR7827076A FR7827076A FR2404303B1 FR 2404303 B1 FR2404303 B1 FR 2404303B1 FR 7827076 A FR7827076 A FR 7827076A FR 7827076 A FR7827076 A FR 7827076A FR 2404303 B1 FR2404303 B1 FR 2404303B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743245 DE2743245A1 (de) | 1977-09-26 | 1977-09-26 | Ladungsgekoppeltes bauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2404303A1 FR2404303A1 (fr) | 1979-04-20 |
FR2404303B1 true FR2404303B1 (fr) | 1983-08-19 |
Family
ID=6019909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7827076A Granted FR2404303A1 (fr) | 1977-09-26 | 1978-09-21 | Composant a couplage direct de charge |
Country Status (5)
Country | Link |
---|---|
US (1) | US4264915A (fr) |
JP (1) | JPS5457869A (fr) |
DE (1) | DE2743245A1 (fr) |
FR (1) | FR2404303A1 (fr) |
GB (1) | GB2005074A (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692993A (en) * | 1978-12-05 | 1987-09-15 | Clark Marion D | Schottky barrier charge coupled device (CCD) manufacture |
GB2043336B (en) * | 1979-02-19 | 1983-02-09 | Philips Electronic Associated | Charge-coupled devices |
EP0025658A3 (fr) * | 1979-09-18 | 1983-04-20 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Dispositifs de stockage et de transfert de charges et leur procédé de fabrication |
US4696533A (en) * | 1981-01-12 | 1987-09-29 | Massachusetts Institute Of Technology | Spatial light modulator |
GB2100511B (en) * | 1981-05-15 | 1985-02-27 | Rockwell International Corp | Detector for responding to light at a predetermined wavelength and method of making the detector |
JPS58103172A (ja) * | 1981-12-16 | 1983-06-20 | Nec Corp | 電荷転送装置 |
US4675714A (en) * | 1983-02-15 | 1987-06-23 | Rockwell International Corporation | Gapless gate charge coupled device |
US4735913A (en) * | 1986-05-06 | 1988-04-05 | Bell Communications Research, Inc. | Self-aligned fabrication process for GaAs MESFET devices |
WO1991014284A1 (fr) * | 1990-03-06 | 1991-09-19 | Unisearch Limited | Dispositif a couplage de charge a jonctions de schottky |
AU1995092A (en) * | 1991-05-10 | 1992-12-30 | Q-Dot. Inc. | High-speed peristaltic ccd imager with gaas fet output |
US5138416A (en) * | 1991-07-12 | 1992-08-11 | Xerox Corporation | Multi-color photosensitive element with heterojunctions |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
SE383573B (sv) * | 1971-04-06 | 1976-03-15 | Western Electric Co | Laddningskopplad anordning |
JPS48101889A (fr) * | 1972-04-03 | 1973-12-21 | ||
NL165886C (nl) * | 1972-04-03 | 1981-05-15 | Hitachi Ltd | Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers. |
NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
DE2400208A1 (de) * | 1974-01-03 | 1975-07-17 | Siemens Ag | Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden |
GB1498940A (en) * | 1974-10-25 | 1978-01-25 | Nat Res Dev | Semiconductor devices |
US3965481A (en) * | 1974-11-22 | 1976-06-22 | U.S. Philips Corporation | Charge transfer device with J FET isolation and means to drain stray charge |
DE2658526C2 (de) * | 1976-12-23 | 1985-10-24 | Siemens AG, 1000 Berlin und 8000 München | Ladungsgekoppeltes Halbleiter-Bauelement |
US4151539A (en) * | 1977-12-23 | 1979-04-24 | The United States Of America As Represented By The Secretary Of The Air Force | Junction-storage JFET bucket-brigade structure |
-
1977
- 1977-09-26 DE DE19772743245 patent/DE2743245A1/de not_active Withdrawn
-
1978
- 1978-08-21 US US05/935,532 patent/US4264915A/en not_active Expired - Lifetime
- 1978-09-21 FR FR7827076A patent/FR2404303A1/fr active Granted
- 1978-09-25 JP JP11782478A patent/JPS5457869A/ja active Pending
- 1978-09-25 GB GB7837946A patent/GB2005074A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPS5457869A (en) | 1979-05-10 |
DE2743245A1 (de) | 1979-04-05 |
FR2404303A1 (fr) | 1979-04-20 |
GB2005074A (en) | 1979-04-11 |
US4264915A (en) | 1981-04-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |