FR2402305A1 - Dispositif integre monolithique a semi-conducteurs - Google Patents

Dispositif integre monolithique a semi-conducteurs

Info

Publication number
FR2402305A1
FR2402305A1 FR7825159A FR7825159A FR2402305A1 FR 2402305 A1 FR2402305 A1 FR 2402305A1 FR 7825159 A FR7825159 A FR 7825159A FR 7825159 A FR7825159 A FR 7825159A FR 2402305 A1 FR2402305 A1 FR 2402305A1
Authority
FR
France
Prior art keywords
conductors
monolithic semiconductor
semiconductor integrated
integrated device
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7825159A
Other languages
English (en)
Other versions
FR2402305B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2402305A1 publication Critical patent/FR2402305A1/fr
Application granted granted Critical
Publication of FR2402305B1 publication Critical patent/FR2402305B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)

Abstract

L'invention concerne un dispositif monolithique à semi-conducteurs. Dans ce dispositif comportant des conducteurs d'un premier type G1, G2 et d'un second type L1 à L4 s'intersectant et reliés à une tension d'alimentation, et des conducteurs B1, B2 d'amenée du potentiel de référence, au-dessus des conducteurs L1 à L4 et B1, B2 sont disposées des parties L1', L2', B1' d'un premier revêtement conducteur, les conducteurs G1, G2 étant constitués par des parties d'un second revêtement électriquement conducteur, plus rapprochées de la surface du semi-conducteur 1 uniquement dans la zone de points d'intersection 11, 12. Application notamment aux mémoires mortes et aux décodeurs.
FR7825159A 1977-09-06 1978-08-31 Dispositif integre monolithique a semi-conducteurs Granted FR2402305A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772740154 DE2740154A1 (de) 1977-09-06 1977-09-06 Monolithisch integrierte halbleiteranordnung

Publications (2)

Publication Number Publication Date
FR2402305A1 true FR2402305A1 (fr) 1979-03-30
FR2402305B1 FR2402305B1 (fr) 1982-05-14

Family

ID=6018255

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7825159A Granted FR2402305A1 (fr) 1977-09-06 1978-08-31 Dispositif integre monolithique a semi-conducteurs

Country Status (8)

Country Link
US (1) US4225876A (fr)
JP (1) JPS603786B2 (fr)
BE (1) BE870262A (fr)
CA (1) CA1137220A (fr)
DE (1) DE2740154A1 (fr)
FR (1) FR2402305A1 (fr)
GB (1) GB2004118B (fr)
IT (1) IT1098716B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850765A (ja) * 1981-09-21 1983-03-25 Hitachi Ltd 半導体集積回路装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704384A (en) * 1971-03-30 1972-11-28 Ibm Monolithic capacitor structure
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3810125A (en) * 1971-09-30 1974-05-07 Siemens Ag Integrated circuit electrical capacitor, particularly as a storage element for semiconductor memories
FR2310609A1 (fr) * 1975-05-05 1976-12-03 Intel Corp Cellule et paire de cellules de memoire a acces direct sans contact
US4044340A (en) * 1974-12-25 1977-08-23 Hitachi, Ltd. Semiconductor memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713079B2 (fr) * 1975-02-10 1982-03-15
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
US4150389A (en) * 1976-09-29 1979-04-17 Siemens Aktiengesellschaft N-channel memory field effect transistor
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3704384A (en) * 1971-03-30 1972-11-28 Ibm Monolithic capacitor structure
US3810125A (en) * 1971-09-30 1974-05-07 Siemens Ag Integrated circuit electrical capacitor, particularly as a storage element for semiconductor memories
US4044340A (en) * 1974-12-25 1977-08-23 Hitachi, Ltd. Semiconductor memory
FR2310609A1 (fr) * 1975-05-05 1976-12-03 Intel Corp Cellule et paire de cellules de memoire a acces direct sans contact

Also Published As

Publication number Publication date
US4225876A (en) 1980-09-30
JPS5450282A (en) 1979-04-20
IT1098716B (it) 1985-09-07
JPS603786B2 (ja) 1985-01-30
DE2740154A1 (de) 1979-03-15
CA1137220A (fr) 1982-12-07
BE870262A (fr) 1979-09-02
GB2004118A (en) 1979-03-21
IT7827143A0 (it) 1978-08-30
FR2402305B1 (fr) 1982-05-14
DE2740154C2 (fr) 1988-01-14
GB2004118B (en) 1982-02-17

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Legal Events

Date Code Title Description
ST Notification of lapse