FR2389233B1 - - Google Patents

Info

Publication number
FR2389233B1
FR2389233B1 FR7809185A FR7809185A FR2389233B1 FR 2389233 B1 FR2389233 B1 FR 2389233B1 FR 7809185 A FR7809185 A FR 7809185A FR 7809185 A FR7809185 A FR 7809185A FR 2389233 B1 FR2389233 B1 FR 2389233B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7809185A
Other versions
FR2389233A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2389233A1 publication Critical patent/FR2389233A1/fr
Application granted granted Critical
Publication of FR2389233B1 publication Critical patent/FR2389233B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/133—Reflow oxides and glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides
FR7809185A 1977-04-29 1978-03-23 Procede de fabrication d'un transistor a effet de champ a porte isolee utilisant deux ou trois masques Granted FR2389233A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/792,278 US4102733A (en) 1977-04-29 1977-04-29 Two and three mask process for IGFET fabrication

Publications (2)

Publication Number Publication Date
FR2389233A1 FR2389233A1 (fr) 1978-11-24
FR2389233B1 true FR2389233B1 (fr) 1982-12-03

Family

ID=25156342

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809185A Granted FR2389233A1 (fr) 1977-04-29 1978-03-23 Procede de fabrication d'un transistor a effet de champ a porte isolee utilisant deux ou trois masques

Country Status (5)

Country Link
US (1) US4102733A (fr)
JP (1) JPS53135583A (fr)
DE (1) DE2817430C2 (fr)
FR (1) FR2389233A1 (fr)
GB (1) GB1550600A (fr)

Families Citing this family (53)

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US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
US4253229A (en) * 1978-04-27 1981-03-03 Xerox Corporation Self-aligned narrow gate MESFET process
JPS54147789A (en) * 1978-05-11 1979-11-19 Matsushita Electric Ind Co Ltd Semiconductor divice and its manufacture
US4231051A (en) * 1978-06-06 1980-10-28 Rockwell International Corporation Process for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structures
DE2832388C2 (de) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4364166A (en) * 1979-03-01 1982-12-21 International Business Machines Corporation Semiconductor integrated circuit interconnections
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
US4261772A (en) * 1979-07-06 1981-04-14 American Microsystems, Inc. Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
US4299862A (en) * 1979-11-28 1981-11-10 General Motors Corporation Etching windows in thick dielectric coatings overlying semiconductor device surfaces
US4276688A (en) * 1980-01-21 1981-07-07 Rca Corporation Method for forming buried contact complementary MOS devices
US4240845A (en) * 1980-02-04 1980-12-23 International Business Machines Corporation Method of fabricating random access memory device
US4400866A (en) * 1980-02-14 1983-08-30 Xerox Corporation Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
US4317276A (en) * 1980-06-12 1982-03-02 Teletype Corporation Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer
US4317690A (en) * 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
JPS5748246A (en) * 1980-08-13 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors
US4341009A (en) * 1980-12-05 1982-07-27 International Business Machines Corporation Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
US4374700A (en) * 1981-05-29 1983-02-22 Texas Instruments Incorporated Method of manufacturing silicide contacts for CMOS devices
DE3132809A1 (de) * 1981-08-19 1983-03-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren, insbesondere von komplementaeren mos-feldeffekttransistorenschaltungen mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene
JPS58175846A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
US4400867A (en) * 1982-04-26 1983-08-30 Bell Telephone Laboratories, Incorporated High conductivity metallization for semiconductor integrated circuits
US4507851A (en) * 1982-04-30 1985-04-02 Texas Instruments Incorporated Process for forming an electrical interconnection system on a semiconductor
DE3218309A1 (de) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene
US4445270A (en) * 1982-06-21 1984-05-01 Rca Corporation Low resistance contact for high density integrated circuit
US4888297A (en) * 1982-09-20 1989-12-19 International Business Machines Corporation Process for making a contact structure including polysilicon and metal alloys
FR2535525A1 (fr) * 1982-10-29 1984-05-04 Western Electric Co Procede de fabrication de circuits integres comportant des couches isolantes minces
JPS59123429U (ja) * 1983-02-08 1984-08-20 株式会社協和 ランドセルのマチ上部補強具
US4507852A (en) * 1983-09-12 1985-04-02 Rockwell International Corporation Method for making a reliable ohmic contact between two layers of integrated circuit metallizations
US4519126A (en) * 1983-12-12 1985-05-28 Rca Corporation Method of fabricating high speed CMOS devices
US5121186A (en) * 1984-06-15 1992-06-09 Hewlett-Packard Company Integrated circuit device having improved junction connections
US4873204A (en) * 1984-06-15 1989-10-10 Hewlett-Packard Company Method for making silicide interconnection structures for integrated circuit devices
US4635347A (en) * 1985-03-29 1987-01-13 Advanced Micro Devices, Inc. Method of fabricating titanium silicide gate electrodes and interconnections
US4821085A (en) * 1985-05-01 1989-04-11 Texas Instruments Incorporated VLSI local interconnect structure
US4648175A (en) * 1985-06-12 1987-03-10 Ncr Corporation Use of selectively deposited tungsten for contact formation and shunting metallization
US5053349A (en) * 1988-06-16 1991-10-01 Kabushiki Kaisha Toshiba Method for interconnecting semiconductor devices
US5543646A (en) * 1988-09-08 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5272100A (en) * 1988-09-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode and manufacturing method therefor
US5089863A (en) * 1988-09-08 1992-02-18 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode
US4980301A (en) * 1988-12-21 1990-12-25 At&T Bell Laboratories Method for reducing mobile ion contamination in semiconductor integrated circuits
JPH03141645A (ja) * 1989-07-10 1991-06-17 Texas Instr Inc <Ti> ポリサイドによる局所的相互接続方法とその方法により製造された半導体素子
JP2757927B2 (ja) * 1990-06-28 1998-05-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体基板上の隔置されたシリコン領域の相互接続方法
US5196360A (en) * 1990-10-02 1993-03-23 Micron Technologies, Inc. Methods for inhibiting outgrowth of silicide in self-aligned silicide process
US5156994A (en) * 1990-12-21 1992-10-20 Texas Instruments Incorporated Local interconnect method and structure
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KR960001176B1 (ko) * 1992-12-02 1996-01-19 현대전자산업주식회사 반도체 접속장치 및 그 제조방법
DE4310640C1 (de) * 1993-03-31 1994-05-11 Lueder Ernst Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
US6284584B1 (en) 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
KR960030440A (ko) * 1995-01-12 1996-08-17 모리시다 요이치 반도체 장치 및 그 제조방법
US6331468B1 (en) * 1998-05-11 2001-12-18 Lsi Logic Corporation Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers

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US3590471A (en) * 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation
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US3921282A (en) * 1971-02-16 1975-11-25 Texas Instruments Inc Insulated gate field effect transistor circuits and their method of fabrication
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US3750268A (en) * 1971-09-10 1973-08-07 Motorola Inc Poly-silicon electrodes for c-igfets
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US3958323A (en) * 1975-04-29 1976-05-25 International Business Machines Corporation Three mask self aligned IGFET fabrication process

Also Published As

Publication number Publication date
JPS53135583A (en) 1978-11-27
JPS5651512B2 (fr) 1981-12-05
DE2817430C2 (de) 1986-06-26
GB1550600A (en) 1979-08-15
US4102733A (en) 1978-07-25
FR2389233A1 (fr) 1978-11-24
DE2817430A1 (de) 1978-11-02

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