FR2387081A1 - Procede de dopage de silicium de haute purete dans un element de chauffage a arc - Google Patents

Procede de dopage de silicium de haute purete dans un element de chauffage a arc

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Publication number
FR2387081A1
FR2387081A1 FR7810634A FR7810634A FR2387081A1 FR 2387081 A1 FR2387081 A1 FR 2387081A1 FR 7810634 A FR7810634 A FR 7810634A FR 7810634 A FR7810634 A FR 7810634A FR 2387081 A1 FR2387081 A1 FR 2387081A1
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France
Prior art keywords
heating element
silicon
doping process
high pure
pure silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7810634A
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English (en)
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FR2387081B1 (fr
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CBS Corp
Original Assignee
Westinghouse Electric Corp
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Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2387081A1 publication Critical patent/FR2387081A1/fr
Application granted granted Critical
Publication of FR2387081B1 publication Critical patent/FR2387081B1/fr
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge
    • H05B7/185—Heating gases for arc discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé pour doper du silicium. Dans un courant de gaz chauffé à l'arc, on introduit un métal réducteur (métal alcalin ou alcalino-terreux) ainsi qu'un halogénure de silicium et un halogénure correspondant d'un agent de dopage comme l'arsenic, qui réagissent pour donner un sel du metal réducteur et un mélange de silicium liquide et d'agent dopant On sépare le sel du mélange. Application à la production de silicium de qualité solaire dope.
FR7810634A 1977-04-14 1978-04-11 Procede de dopage de silicium de haute purete dans un element de chauffage a arc Expired FR2387081B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/787,634 US4102766A (en) 1977-04-14 1977-04-14 Process for doping high purity silicon in an arc heater

Publications (2)

Publication Number Publication Date
FR2387081A1 true FR2387081A1 (fr) 1978-11-10
FR2387081B1 FR2387081B1 (fr) 1985-07-19

Family

ID=25142100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7810634A Expired FR2387081B1 (fr) 1977-04-14 1978-04-11 Procede de dopage de silicium de haute purete dans un element de chauffage a arc

Country Status (6)

Country Link
US (1) US4102766A (fr)
JP (1) JPS6048480B2 (fr)
CA (1) CA1109568A (fr)
DE (1) DE2816234A1 (fr)
FR (1) FR2387081B1 (fr)
GB (1) GB1603315A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122768A2 (fr) * 1983-04-15 1984-10-24 Westinghouse Electric Corporation Cubilot fonctionnant à l'arc électrique pour la fusion de copeaux métalliques

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239740A (en) * 1979-05-25 1980-12-16 Westinghouse Electric Corp. Production of high purity silicon by a heterogeneous arc heater reduction
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
US4584181A (en) * 1982-12-27 1986-04-22 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4529576A (en) * 1982-12-27 1985-07-16 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
JPH0191595U (fr) * 1987-12-07 1989-06-15
US4845334A (en) * 1988-01-26 1989-07-04 Oregon Metallurgical Corporation Plasma furnace inert gas recycling system and process
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
US6987792B2 (en) * 2001-08-22 2006-01-17 Solena Group, Inc. Plasma pyrolysis, gasification and vitrification of organic material
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
US9284503B2 (en) * 2008-04-21 2016-03-15 Christopher Lawrence de Graffenried, SR. Manufacture of gas from hydrogen-bearing starting materials
US20100035422A1 (en) * 2008-08-06 2010-02-11 Honeywell International, Inc. Methods for forming doped regions in a semiconductor material
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) * 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH355220A (de) * 1954-06-13 1961-06-30 Siemens Ag Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
GB885117A (en) * 1957-07-03 1961-12-20 Standard Telephones Cables Ltd Improvements in or relating to the preparation of a solid element by thermal decomposition of its hydride
FR2376821A1 (fr) * 1977-01-06 1978-08-04 Westinghouse Electric Corp Procede de fabrication de silicium tres pur

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2172969A (en) * 1936-09-28 1939-09-12 Eringer Josef Process for obtaining silicon from its compounds
DE1147567B (de) * 1960-01-15 1963-04-25 Siemens Ag Verfahren zum Gewinnen von insbesondere einkristallinem, halbleitendem Silicium
NL125293C (fr) * 1961-05-16 1900-01-01
NL142824C (fr) * 1963-04-19
CH525705A (de) * 1968-12-24 1972-07-31 Lonza Ag Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen
US3915764A (en) * 1973-05-18 1975-10-28 Westinghouse Electric Corp Sputtering method for growth of thin uniform layers of epitaxial semiconductive materials doped with impurities

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH355220A (de) * 1954-06-13 1961-06-30 Siemens Ag Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
GB885117A (en) * 1957-07-03 1961-12-20 Standard Telephones Cables Ltd Improvements in or relating to the preparation of a solid element by thermal decomposition of its hydride
FR2376821A1 (fr) * 1977-01-06 1978-08-04 Westinghouse Electric Corp Procede de fabrication de silicium tres pur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122768A2 (fr) * 1983-04-15 1984-10-24 Westinghouse Electric Corporation Cubilot fonctionnant à l'arc électrique pour la fusion de copeaux métalliques
EP0122768A3 (en) * 1983-04-15 1985-07-03 Westinghouse Electric Corporation An electric arc fired cupola for remelting of metal chips

Also Published As

Publication number Publication date
JPS53128993A (en) 1978-11-10
DE2816234A1 (de) 1978-10-26
GB1603315A (en) 1981-11-25
JPS6048480B2 (ja) 1985-10-28
CA1109568A (fr) 1981-09-22
US4102766A (en) 1978-07-25
FR2387081B1 (fr) 1985-07-19

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