FR2377094B1 - - Google Patents

Info

Publication number
FR2377094B1
FR2377094B1 FR7800440A FR7800440A FR2377094B1 FR 2377094 B1 FR2377094 B1 FR 2377094B1 FR 7800440 A FR7800440 A FR 7800440A FR 7800440 A FR7800440 A FR 7800440A FR 2377094 B1 FR2377094 B1 FR 2377094B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7800440A
Other versions
FR2377094A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KREMLEV VYACHESLAV
Original Assignee
KREMLEV VYACHESLAV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441813A external-priority patent/SU602056A1/ru
Priority claimed from SU772441910A external-priority patent/SU633395A1/ru
Application filed by KREMLEV VYACHESLAV filed Critical KREMLEV VYACHESLAV
Publication of FR2377094A1 publication Critical patent/FR2377094A1/fr
Application granted granted Critical
Publication of FR2377094B1 publication Critical patent/FR2377094B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225Charge injection in static induction transistor logic structures [SITL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7800440A 1977-01-10 1978-01-09 Circuit logique integre Granted FR2377094A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU772441813A SU602056A1 (ru) 1977-01-10 1977-01-10 Интегральный инвертор
SU772441910A SU633395A1 (ru) 1977-01-10 1977-01-10 Интегральна логическа схема

Publications (2)

Publication Number Publication Date
FR2377094A1 FR2377094A1 (fr) 1978-08-04
FR2377094B1 true FR2377094B1 (fr) 1980-05-16

Family

ID=26665610

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800440A Granted FR2377094A1 (fr) 1977-01-10 1978-01-09 Circuit logique integre

Country Status (10)

Country Link
US (1) US4175240A (fr)
JP (1) JPS53111287A (fr)
CH (1) CH631298A5 (fr)
CS (1) CS201645B1 (fr)
DD (1) DD134585A1 (fr)
DE (1) DE2800924C2 (fr)
FR (1) FR2377094A1 (fr)
GB (1) GB1557657A (fr)
NL (1) NL7800133A (fr)
PL (1) PL114678B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
JPH0760997B2 (ja) * 1986-06-09 1995-06-28 日本テキサス・インスツルメンツ株式会社 高耐圧出力回路
JP3300593B2 (ja) * 1995-06-15 2002-07-08 株式会社東芝 半導体集積回路装置
US6737301B2 (en) 2000-07-13 2004-05-18 Isothermal Systems Research, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
FI20150334A (fi) 2015-01-14 2016-07-15 Artto Mikael Aurola Paranneltu puolijohdekokoonpano

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065680A (en) * 1974-07-11 1977-12-27 Signetics Corporation Collector-up logic transmission gates
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4053923A (en) * 1976-09-23 1977-10-11 Motorola, Inc. Integrated logic elements with improved speed-power characteristics

Also Published As

Publication number Publication date
JPS53111287A (en) 1978-09-28
DE2800924C2 (de) 1982-10-28
PL114678B1 (en) 1981-02-28
CS201645B1 (en) 1980-11-28
PL203794A1 (pl) 1978-10-23
NL7800133A (nl) 1978-07-12
DE2800924A1 (de) 1978-07-20
GB1557657A (en) 1979-12-12
CH631298A5 (de) 1982-07-30
US4175240A (en) 1979-11-20
DD134585A1 (de) 1979-03-07
FR2377094A1 (fr) 1978-08-04

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