FR2373164A1 - Memoire morte a dimension optimisee pour obtenir une performance amelioree et une utilisation amelioree de la surface du bloc - Google Patents
Memoire morte a dimension optimisee pour obtenir une performance amelioree et une utilisation amelioree de la surface du blocInfo
- Publication number
- FR2373164A1 FR2373164A1 FR7732159A FR7732159A FR2373164A1 FR 2373164 A1 FR2373164 A1 FR 2373164A1 FR 7732159 A FR7732159 A FR 7732159A FR 7732159 A FR7732159 A FR 7732159A FR 2373164 A1 FR2373164 A1 FR 2373164A1
- Authority
- FR
- France
- Prior art keywords
- capacity
- dimension
- line
- substrate
- internal capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000013500 data storage Methods 0.000 abstract 1
- 230000003292 diminished effect Effects 0.000 abstract 1
- 230000005055 memory storage Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74714076A | 1976-12-03 | 1976-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2373164A1 true FR2373164A1 (fr) | 1978-06-30 |
| FR2373164B1 FR2373164B1 (https=) | 1980-08-08 |
Family
ID=25003811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7732159A Granted FR2373164A1 (fr) | 1976-12-03 | 1977-10-18 | Memoire morte a dimension optimisee pour obtenir une performance amelioree et une utilisation amelioree de la surface du bloc |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | UST977006I4 (https=) |
| JP (1) | JPS5369553A (https=) |
| FR (1) | FR2373164A1 (https=) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3541543A (en) * | 1966-07-25 | 1970-11-17 | Texas Instruments Inc | Binary decoder |
-
1977
- 1977-10-18 FR FR7732159A patent/FR2373164A1/fr active Granted
- 1977-10-26 JP JP12770577A patent/JPS5369553A/ja active Pending
-
1978
- 1978-04-24 US US05/899,615 patent/UST977006I4/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3541543A (en) * | 1966-07-25 | 1970-11-17 | Texas Instruments Inc | Binary decoder |
Also Published As
| Publication number | Publication date |
|---|---|
| UST977006I4 (en) | 1978-12-05 |
| JPS5369553A (en) | 1978-06-21 |
| FR2373164B1 (https=) | 1980-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR850004688A (ko) | 연상(蓮想) 메모리 장치 | |
| CA1270328C (en) | SEMICONDUCTOR MEMORY WITH TWIN CAPACITOR TYPE CELLS | |
| HK42290A (en) | A semiconductor memory device | |
| JPS56108259A (en) | Semiconductor memory device | |
| KR890002886A (ko) | 반도체 기억장치 | |
| KR880010421A (ko) | 오픈 비트선 구조를 가지는 다이나믹형 랜덤 억세스 메모리 | |
| KR840003146A (ko) | 다이나믹(Dynamic) RAM 집적회로 장치 | |
| KR930005020A (ko) | 망사 구조의 전원선을 가지는 반도체 메모리 장치 | |
| KR930020447A (ko) | 반도체 메모리 장치의 비트라인 프리차아지방식 | |
| KR900006220B1 (en) | Semiconductor memory device | |
| GB1322990A (en) | Integrated circuit devices | |
| KR920001545A (ko) | 반도체 기억장치 | |
| KR850000799A (ko) | 호출 전용 메모리 | |
| JPS56130888A (en) | Semiconductor memory device | |
| JPS57109190A (en) | Semiconductor storage device and its manufacture | |
| JPS57113482A (en) | Semiconductor storage device | |
| FR2373164A1 (fr) | Memoire morte a dimension optimisee pour obtenir une performance amelioree et une utilisation amelioree de la surface du bloc | |
| JPS52129337A (en) | Memory circuit | |
| EP0107864A3 (en) | Dynamic memory circuit with improved noise-prevention circuit arrangement for word lines | |
| FR2399097A1 (fr) | Element de memoire | |
| EP0136819A3 (en) | Semiconductor memory | |
| JPS57127987A (en) | Static semiconductor memory | |
| JPS5967666A (ja) | Ｒｏｍ | |
| KR900006974A (ko) | 준-폴드된 비트라인을 이용한 메모리 디바이스 | |
| US4259727A (en) | Magnetic bubble memory device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |