FR2363889B1 - - Google Patents
Info
- Publication number
- FR2363889B1 FR2363889B1 FR7726691A FR7726691A FR2363889B1 FR 2363889 B1 FR2363889 B1 FR 2363889B1 FR 7726691 A FR7726691 A FR 7726691A FR 7726691 A FR7726691 A FR 7726691A FR 2363889 B1 FR2363889 B1 FR 2363889B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
- H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/720,550 US4149177A (en) | 1976-09-03 | 1976-09-03 | Method of fabricating conductive buried regions in integrated circuits and the resulting structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2363889A1 FR2363889A1 (fr) | 1978-03-31 |
| FR2363889B1 true FR2363889B1 (https=) | 1983-01-14 |
Family
ID=24894399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7726691A Granted FR2363889A1 (fr) | 1976-09-03 | 1977-09-02 | Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4149177A (https=) |
| JP (1) | JPS5331984A (https=) |
| CA (1) | CA1085064A (https=) |
| DE (1) | DE2738049A1 (https=) |
| FR (1) | FR2363889A1 (https=) |
| GB (1) | GB1577420A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
| US4231056A (en) * | 1978-10-20 | 1980-10-28 | Harris Corporation | Moat resistor ram cell |
| US4277882A (en) * | 1978-12-04 | 1981-07-14 | Fairchild Camera And Instrument Corporation | Method of producing a metal-semiconductor field-effect transistor |
| JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
| US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
| US4961102A (en) * | 1982-01-04 | 1990-10-02 | Shideler Jay A | Junction programmable vertical transistor with high performance transistor |
| JPS58199537A (ja) * | 1982-05-14 | 1983-11-19 | Matsushita Electric Ind Co Ltd | 高抵抗半導体層の製造方法 |
| US4549927A (en) * | 1984-06-29 | 1985-10-29 | International Business Machines Corporation | Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices |
| US5023200A (en) * | 1988-11-22 | 1991-06-11 | The United States Of America As Represented By The United States Department Of Energy | Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| NL170901C (nl) * | 1971-04-03 | 1983-01-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPS4975280A (https=) * | 1972-11-24 | 1974-07-19 | ||
| US3975752A (en) * | 1973-04-04 | 1976-08-17 | Harris Corporation | Junction field effect transistor |
| US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
-
1976
- 1976-09-03 US US05/720,550 patent/US4149177A/en not_active Expired - Lifetime
-
1977
- 1977-06-13 GB GB24570/77A patent/GB1577420A/en not_active Expired
- 1977-08-24 DE DE19772738049 patent/DE2738049A1/de not_active Ceased
- 1977-08-25 JP JP10119577A patent/JPS5331984A/ja active Granted
- 1977-09-02 FR FR7726691A patent/FR2363889A1/fr active Granted
- 1977-09-02 CA CA286,028A patent/CA1085064A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4149177A (en) | 1979-04-10 |
| CA1085064A (en) | 1980-09-02 |
| JPS5331984A (en) | 1978-03-25 |
| GB1577420A (en) | 1980-10-22 |
| JPS6224944B2 (https=) | 1987-05-30 |
| DE2738049A1 (de) | 1978-03-09 |
| FR2363889A1 (fr) | 1978-03-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |