FR2357073A1 - Detecteur de champ magnetique a effet hall - Google Patents

Detecteur de champ magnetique a effet hall

Info

Publication number
FR2357073A1
FR2357073A1 FR7716788A FR7716788A FR2357073A1 FR 2357073 A1 FR2357073 A1 FR 2357073A1 FR 7716788 A FR7716788 A FR 7716788A FR 7716788 A FR7716788 A FR 7716788A FR 2357073 A1 FR2357073 A1 FR 2357073A1
Authority
FR
France
Prior art keywords
magnetic field
detector
hall
field detector
effect magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7716788A
Other languages
English (en)
Other versions
FR2357073B1 (fr
Inventor
Albert W Vinal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2357073A1 publication Critical patent/FR2357073A1/fr
Application granted granted Critical
Publication of FR2357073B1 publication Critical patent/FR2357073B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

Détecteur de champs magnétiques à structure semi-conductrice à effet de champ. Le détecteur 1 comporte une source 2 et un drain 3 qui assurent un contact ohmique avec le canal se trouvant dans la région 4. Une électrode-écran 5 sert de porte de commande. Une sonde de sortie 6 est placée à une distance S de la source 2. Une tension de Hall est engendrée par le détecteur en réponse aux champs magnétiques auxquels il est soumis. La tension appliquée à la porte 5 détermine la position de la zone d'appauvrissement dans le canal et les vitesses de porteurs optimales.
FR7716788A 1976-06-30 1977-05-25 Detecteur de champ magnetique a effet hall Granted FR2357073A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/701,339 US4048648A (en) 1976-06-30 1976-06-30 High carrier velocity fet magnetic sensor

Publications (2)

Publication Number Publication Date
FR2357073A1 true FR2357073A1 (fr) 1978-01-27
FR2357073B1 FR2357073B1 (fr) 1980-12-19

Family

ID=24816966

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7716788A Granted FR2357073A1 (fr) 1976-06-30 1977-05-25 Detecteur de champ magnetique a effet hall

Country Status (7)

Country Link
US (1) US4048648A (fr)
JP (1) JPS533173A (fr)
CA (1) CA1095180A (fr)
DE (1) DE2727944A1 (fr)
FR (1) FR2357073A1 (fr)
GB (1) GB1568744A (fr)
IT (1) IT1115355B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
US4520413A (en) * 1982-04-13 1985-05-28 Minnesota Mining And Manufacturing Company Integrated magnetostrictive-piezoelectric-metal oxide semiconductor magnetic playback head
CH658546A5 (de) * 1982-08-30 1986-11-14 Landis & Gyr Ag Hallelement mit speisung.
JPS6242473A (ja) * 1985-08-19 1987-02-24 Matsushita Electronics Corp ホ−ル効果装置およびその製造方法
JPH0671099B2 (ja) * 1987-12-02 1994-09-07 住友電気工業株式会社 不揮発性記憶装置
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
DK94995A (da) * 1995-08-24 1997-02-25 Microtronic As Magnetfeltsensor
DE10144268B4 (de) * 2001-09-08 2015-03-05 Robert Bosch Gmbh Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes
US7015557B2 (en) * 2004-04-16 2006-03-21 Honeywell International Inc. Hall element with segmented field plate
GB2413962A (en) * 2004-05-11 2005-11-16 Julian Charles Glatt Sleep inducing and/or comforting device for infants
US8000062B2 (en) 2008-12-30 2011-08-16 Hitachi Global Storage Technologies Netherlands B.V. Enhanced magnetoresistance and localized sensitivity by gating in lorentz magnetoresistors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003105A (en) * 1959-06-29 1961-10-03 Ibm Three lead hall probes
US3448353A (en) * 1966-11-14 1969-06-03 Westinghouse Electric Corp Mos field effect transistor hall effect devices
GB1243178A (en) * 1967-09-22 1971-08-18 Plessey Co Ltd Improvements relating to "hall effect" devices
US3836993A (en) * 1971-12-27 1974-09-17 Licentia Gmbh Magnetic field dependent field effect transistor
US3829883A (en) * 1972-08-31 1974-08-13 R Bate Magnetic field detector employing plural drain igfet

Also Published As

Publication number Publication date
FR2357073B1 (fr) 1980-12-19
CA1095180A (fr) 1981-02-03
DE2727944C2 (fr) 1987-06-11
DE2727944A1 (de) 1978-01-05
JPS5330994B2 (fr) 1978-08-30
US4048648A (en) 1977-09-13
GB1568744A (en) 1980-06-04
JPS533173A (en) 1978-01-12
IT1115355B (it) 1986-02-03

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Legal Events

Date Code Title Description
ST Notification of lapse