GB1243178A - Improvements relating to "hall effect" devices - Google Patents

Improvements relating to "hall effect" devices

Info

Publication number
GB1243178A
GB1243178A GB6023/68A GB602368A GB1243178A GB 1243178 A GB1243178 A GB 1243178A GB 6023/68 A GB6023/68 A GB 6023/68A GB 602368 A GB602368 A GB 602368A GB 1243178 A GB1243178 A GB 1243178A
Authority
GB
United Kingdom
Prior art keywords
drains
semi
conductor
hall effect
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6023/68A
Inventor
Stephen John Hoey
John Anthony Parker
Peter William Fry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Publication of GB1243178A publication Critical patent/GB1243178A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)

Abstract

1,243,178. Semi-conductor devices. PLESSEY CO. Ltd. 23 Dec., 1968 [22 Sept., 1967; 7 Feb., 1968], Nos. 43259/67 and 6023/68. Heading H1K. A Hall effect device comprises a MOSFET having a source 2, a metal gate 6 insulated from the semi-conductor body 1 by an insulating layer 5, and two or more drains 3, 4 the device being arranged so that an appropriate voltage applied to the gate electrode establishes an inversion channel below the oxide layer 5 between the source and the drains, wherein the current flow in that inversion channel, being dependent upon any magnetic field acting on the semi-conductor body, produces a voltage differential between the drains proportional to such a magnetic field due to the deflection of the current by the field preferentially towards one of the drains. The device is used to measure magnetic fields. The semi-conductor material is silicon, the insulating layer is of silicon oxide and the metal gate is of aluminium.
GB6023/68A 1967-09-22 1967-09-22 Improvements relating to "hall effect" devices Expired GB1243178A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4325967 1967-09-22

Publications (1)

Publication Number Publication Date
GB1243178A true GB1243178A (en) 1971-08-18

Family

ID=10427974

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6023/68A Expired GB1243178A (en) 1967-09-22 1967-09-22 Improvements relating to "hall effect" devices

Country Status (1)

Country Link
GB (1) GB1243178A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048648A (en) * 1976-06-30 1977-09-13 International Business Machines Corporation High carrier velocity fet magnetic sensor
US7440227B2 (en) 2005-02-28 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
CN107367679A (en) * 2017-06-19 2017-11-21 武汉嘉仪通科技有限公司 Hall effect test system
CN111416035A (en) * 2020-03-26 2020-07-14 中国科学院微电子研究所 Nonvolatile Hall sensor and manufacturing method and testing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048648A (en) * 1976-06-30 1977-09-13 International Business Machines Corporation High carrier velocity fet magnetic sensor
US7440227B2 (en) 2005-02-28 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
CN107367679A (en) * 2017-06-19 2017-11-21 武汉嘉仪通科技有限公司 Hall effect test system
CN111416035A (en) * 2020-03-26 2020-07-14 中国科学院微电子研究所 Nonvolatile Hall sensor and manufacturing method and testing method thereof
CN111416035B (en) * 2020-03-26 2023-02-07 中国科学院微电子研究所 Nonvolatile Hall sensor and manufacturing method and testing method thereof

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