FR2354636A1 - Composant a semi-conducteurs - Google Patents

Composant a semi-conducteurs

Info

Publication number
FR2354636A1
FR2354636A1 FR7717021A FR7717021A FR2354636A1 FR 2354636 A1 FR2354636 A1 FR 2354636A1 FR 7717021 A FR7717021 A FR 7717021A FR 7717021 A FR7717021 A FR 7717021A FR 2354636 A1 FR2354636 A1 FR 2354636A1
Authority
FR
France
Prior art keywords
semiconductor component
axial direction
semiconductor body
effect
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717021A
Other languages
English (en)
French (fr)
Other versions
FR2354636B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2354636A1 publication Critical patent/FR2354636A1/fr
Application granted granted Critical
Publication of FR2354636B1 publication Critical patent/FR2354636B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Thyristors (AREA)
FR7717021A 1976-06-09 1977-06-03 Composant a semi-conducteurs Granted FR2354636A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2625856A DE2625856C3 (de) 1976-06-09 1976-06-09 Halbleiterbauelement

Publications (2)

Publication Number Publication Date
FR2354636A1 true FR2354636A1 (fr) 1978-01-06
FR2354636B1 FR2354636B1 (enExample) 1983-02-04

Family

ID=5980160

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717021A Granted FR2354636A1 (fr) 1976-06-09 1977-06-03 Composant a semi-conducteurs

Country Status (6)

Country Link
US (1) US4115798A (enExample)
JP (1) JPS52150985A (enExample)
CA (1) CA1088214A (enExample)
DE (1) DE2625856C3 (enExample)
FR (1) FR2354636A1 (enExample)
GB (1) GB1569938A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
US4246590A (en) * 1979-01-22 1981-01-20 Westinghouse Electric Corp. Restoration of high infrared sensitivity in extrinsic silicon detectors
US4416051A (en) * 1979-01-22 1983-11-22 Westinghouse Electric Corp. Restoration of high infrared sensitivity in extrinsic silicon detectors
JPS5763860A (en) * 1980-10-06 1982-04-17 Nec Corp Semiconductor device
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
WO1986002202A1 (en) * 1984-09-28 1986-04-10 Motorola, Inc. Charge storage depletion region discharge protection
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
US4796073A (en) * 1986-11-14 1989-01-03 Burr-Brown Corporation Front-surface N+ gettering techniques for reducing noise in integrated circuits
JP2649803B2 (ja) * 1987-05-23 1997-09-03 日本インター株式会社 高速整流素子の製造方法
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1327204A (en) * 1972-01-24 1973-08-15 Ass Elect Ind Semiconductor devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL249699A (enExample) * 1959-04-08
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3419764A (en) * 1966-12-12 1968-12-31 Kasugai Takahiko Negative resistance semiconductor devices
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3990091A (en) * 1973-04-25 1976-11-02 Westinghouse Electric Corporation Low forward voltage drop thyristor
US4031607A (en) * 1974-05-28 1977-06-28 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1327204A (en) * 1972-01-24 1973-08-15 Ass Elect Ind Semiconductor devices

Also Published As

Publication number Publication date
DE2625856C3 (de) 1980-04-17
JPS52150985A (en) 1977-12-15
GB1569938A (en) 1980-06-25
FR2354636B1 (enExample) 1983-02-04
DE2625856A1 (de) 1977-12-15
DE2625856B2 (enExample) 1979-08-02
US4115798A (en) 1978-09-19
CA1088214A (en) 1980-10-21

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Legal Events

Date Code Title Description
ST Notification of lapse