FR2354635A1 - Transistor de puissance - Google Patents

Transistor de puissance

Info

Publication number
FR2354635A1
FR2354635A1 FR7717763A FR7717763A FR2354635A1 FR 2354635 A1 FR2354635 A1 FR 2354635A1 FR 7717763 A FR7717763 A FR 7717763A FR 7717763 A FR7717763 A FR 7717763A FR 2354635 A1 FR2354635 A1 FR 2354635A1
Authority
FR
France
Prior art keywords
conductor
ground
input
output
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717763A
Other languages
English (en)
Other versions
FR2354635B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2354635A1 publication Critical patent/FR2354635A1/fr
Application granted granted Critical
Publication of FR2354635B1 publication Critical patent/FR2354635B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements

Landscapes

  • Microwave Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)

Abstract

a. Semi-conducteur haute fréquence ayant au moins une région active, un conducteur d'entrée, un conducteur de sortie, un conducteur d'entrée de masse, un conducteur de sortie de masse, et au moins deux petits fils courts partant de la région active et allant à deux points distincts, des conducteurs d'entrée et de sortie de masse et un moyen pour commander l'inductance conductrice commune de la surface active vers le conducteur d'entrée et de sortie de masse ; b. Semi-conducteur caractérisé en ce que le moyen pour commander l'inductance des conducteurs communs est un intervalle réalisé dans le conducteur d'entrée et le conducteur de sortie de masse entre les points ci-dessus; c. L'invention concerne les circuits électroniques de haute fréquence.
FR7717763A 1976-06-09 1977-06-09 Transistor de puissance Granted FR2354635A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/694,252 US4042952A (en) 1976-06-09 1976-06-09 R. F. power transistor device with controlled common lead inductance

Publications (2)

Publication Number Publication Date
FR2354635A1 true FR2354635A1 (fr) 1978-01-06
FR2354635B1 FR2354635B1 (fr) 1981-12-24

Family

ID=24788045

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717763A Granted FR2354635A1 (fr) 1976-06-09 1977-06-09 Transistor de puissance

Country Status (7)

Country Link
US (1) US4042952A (fr)
JP (1) JPS52150969A (fr)
CA (1) CA1082372A (fr)
DE (1) DE2726040C3 (fr)
FR (1) FR2354635A1 (fr)
GB (1) GB1574497A (fr)
NL (1) NL182605C (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193083A (en) * 1977-01-07 1980-03-11 Varian Associates, Inc. Package for push-pull semiconductor devices
JPS5386576A (en) * 1977-01-10 1978-07-31 Nec Corp Package for semiconductor element
US4168507A (en) * 1977-11-21 1979-09-18 Motorola, Inc. Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package
JPS55140251A (en) * 1979-04-12 1980-11-01 Fujitsu Ltd Semiconductor device
FR2455785A1 (fr) * 1979-05-02 1980-11-28 Thomson Csf Support isolateur electrique, a faible resistance thermique, et embase ou boitier pour composant de puissance, comportant un tel support
US4376287A (en) * 1980-10-29 1983-03-08 Rca Corporation Microwave power circuit with an active device mounted on a heat dissipating substrate
FR2563050B1 (fr) * 1984-04-13 1987-01-16 Thomson Csf Combineur compact de dispositifs semiconducteurs, fonctionnant en hyperfrequences
DE3444076A1 (de) * 1984-12-04 1986-06-05 ANT Nachrichtentechnik GmbH, 7150 Backnang Kontaktierung einer auf einem substrat angeordneten mikrowellenschaltung
JPS6318648A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 窒化アルミニウム回路基板
US4891686A (en) * 1988-04-08 1990-01-02 Directed Energy, Inc. Semiconductor packaging with ground plane conductor arrangement
US5103283A (en) * 1989-01-17 1992-04-07 Hite Larry R Packaged integrated circuit with in-cavity decoupling capacitors
JPH0583017A (ja) * 1991-09-24 1993-04-02 Mitsubishi Electric Corp マイクロ波集積回路装置
JP2864841B2 (ja) * 1992-02-04 1999-03-08 三菱電機株式会社 高周波高出力トランジスタ
US5311399A (en) * 1992-06-24 1994-05-10 The Carborundum Company High power ceramic microelectronic package
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
TW238419B (fr) * 1992-08-21 1995-01-11 Olin Corp
US5360942A (en) * 1993-11-16 1994-11-01 Olin Corporation Multi-chip electronic package module utilizing an adhesive sheet
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
US6049126A (en) * 1995-12-14 2000-04-11 Nec Corporation Semiconductor package and amplifier employing the same
US5889319A (en) * 1996-07-19 1999-03-30 Ericsson, Inc. RF power package with a dual ground
US6529081B1 (en) 2000-06-08 2003-03-04 Zeta, Division Of Sierra Tech Inc. Method of operating a solid state power amplifying device
WO2002005342A1 (fr) * 2000-07-06 2002-01-17 Zeta, A Division Of Sierratech, Inc. Amplificateur de puissance a transistors
JP4789348B2 (ja) * 2001-05-31 2011-10-12 リンテック株式会社 面状コイル部品、面状コイル部品の特性調整方法、ｉｄタグ、及び、ｉｄタグの共振周波数の調整方法
US6617679B2 (en) * 2002-02-08 2003-09-09 Advanced Energy Industries, Inc. Semiconductor package for multiple high power transistors
US7683480B2 (en) * 2006-03-29 2010-03-23 Freescale Semiconductor, Inc. Methods and apparatus for a reduced inductance wirebond array
US7948078B2 (en) * 2006-07-25 2011-05-24 Rohm Co., Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1193519A (en) * 1967-08-31 1970-06-03 Texas Instruments Ltd Semiconductor Devices
US3590341A (en) * 1968-08-19 1971-06-29 Kmc Semiconductor Corp Microwave transistor package
US3713006A (en) * 1971-02-08 1973-01-23 Trw Inc Hybrid transistor
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns

Also Published As

Publication number Publication date
JPS5757867B2 (fr) 1982-12-07
FR2354635B1 (fr) 1981-12-24
NL7706232A (nl) 1977-12-13
DE2726040B2 (de) 1981-05-27
US4042952A (en) 1977-08-16
NL182605C (nl) 1988-04-05
GB1574497A (en) 1980-09-10
JPS52150969A (en) 1977-12-15
CA1082372A (fr) 1980-07-22
DE2726040A1 (de) 1977-12-15
DE2726040C3 (de) 1982-02-18
NL182605B (nl) 1987-11-02

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Legal Events

Date Code Title Description
ST Notification of lapse