FR2354635A1 - Transistor de puissance - Google Patents
Transistor de puissanceInfo
- Publication number
- FR2354635A1 FR2354635A1 FR7717763A FR7717763A FR2354635A1 FR 2354635 A1 FR2354635 A1 FR 2354635A1 FR 7717763 A FR7717763 A FR 7717763A FR 7717763 A FR7717763 A FR 7717763A FR 2354635 A1 FR2354635 A1 FR 2354635A1
- Authority
- FR
- France
- Prior art keywords
- conductor
- ground
- input
- output
- controlling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01077—Iridium [Ir]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/30—Technical effects
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- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microwave Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
Abstract
a. Semi-conducteur haute fréquence ayant au moins une région active, un conducteur d'entrée, un conducteur de sortie, un conducteur d'entrée de masse, un conducteur de sortie de masse, et au moins deux petits fils courts partant de la région active et allant à deux points distincts, des conducteurs d'entrée et de sortie de masse et un moyen pour commander l'inductance conductrice commune de la surface active vers le conducteur d'entrée et de sortie de masse ; b. Semi-conducteur caractérisé en ce que le moyen pour commander l'inductance des conducteurs communs est un intervalle réalisé dans le conducteur d'entrée et le conducteur de sortie de masse entre les points ci-dessus; c. L'invention concerne les circuits électroniques de haute fréquence.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/694,252 US4042952A (en) | 1976-06-09 | 1976-06-09 | R. F. power transistor device with controlled common lead inductance |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2354635A1 true FR2354635A1 (fr) | 1978-01-06 |
FR2354635B1 FR2354635B1 (fr) | 1981-12-24 |
Family
ID=24788045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7717763A Granted FR2354635A1 (fr) | 1976-06-09 | 1977-06-09 | Transistor de puissance |
Country Status (7)
Country | Link |
---|---|
US (1) | US4042952A (fr) |
JP (1) | JPS52150969A (fr) |
CA (1) | CA1082372A (fr) |
DE (1) | DE2726040C3 (fr) |
FR (1) | FR2354635A1 (fr) |
GB (1) | GB1574497A (fr) |
NL (1) | NL182605C (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4193083A (en) * | 1977-01-07 | 1980-03-11 | Varian Associates, Inc. | Package for push-pull semiconductor devices |
JPS5386576A (en) * | 1977-01-10 | 1978-07-31 | Nec Corp | Package for semiconductor element |
US4168507A (en) * | 1977-11-21 | 1979-09-18 | Motorola, Inc. | Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package |
JPS55140251A (en) * | 1979-04-12 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
FR2455785A1 (fr) * | 1979-05-02 | 1980-11-28 | Thomson Csf | Support isolateur electrique, a faible resistance thermique, et embase ou boitier pour composant de puissance, comportant un tel support |
US4376287A (en) * | 1980-10-29 | 1983-03-08 | Rca Corporation | Microwave power circuit with an active device mounted on a heat dissipating substrate |
FR2563050B1 (fr) * | 1984-04-13 | 1987-01-16 | Thomson Csf | Combineur compact de dispositifs semiconducteurs, fonctionnant en hyperfrequences |
DE3444076A1 (de) * | 1984-12-04 | 1986-06-05 | ANT Nachrichtentechnik GmbH, 7150 Backnang | Kontaktierung einer auf einem substrat angeordneten mikrowellenschaltung |
JPS6318648A (ja) * | 1986-07-11 | 1988-01-26 | Toshiba Corp | 窒化アルミニウム回路基板 |
US4891686A (en) * | 1988-04-08 | 1990-01-02 | Directed Energy, Inc. | Semiconductor packaging with ground plane conductor arrangement |
US5103283A (en) * | 1989-01-17 | 1992-04-07 | Hite Larry R | Packaged integrated circuit with in-cavity decoupling capacitors |
JPH0583017A (ja) * | 1991-09-24 | 1993-04-02 | Mitsubishi Electric Corp | マイクロ波集積回路装置 |
JP2864841B2 (ja) * | 1992-02-04 | 1999-03-08 | 三菱電機株式会社 | 高周波高出力トランジスタ |
US5311399A (en) * | 1992-06-24 | 1994-05-10 | The Carborundum Company | High power ceramic microelectronic package |
JP3053298B2 (ja) * | 1992-08-19 | 2000-06-19 | 株式会社東芝 | 半導体装置 |
TW238419B (fr) * | 1992-08-21 | 1995-01-11 | Olin Corp | |
US5360942A (en) * | 1993-11-16 | 1994-11-01 | Olin Corporation | Multi-chip electronic package module utilizing an adhesive sheet |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
US6049126A (en) * | 1995-12-14 | 2000-04-11 | Nec Corporation | Semiconductor package and amplifier employing the same |
US5889319A (en) * | 1996-07-19 | 1999-03-30 | Ericsson, Inc. | RF power package with a dual ground |
US6529081B1 (en) | 2000-06-08 | 2003-03-04 | Zeta, Division Of Sierra Tech Inc. | Method of operating a solid state power amplifying device |
WO2002005342A1 (fr) * | 2000-07-06 | 2002-01-17 | Zeta, A Division Of Sierratech, Inc. | Amplificateur de puissance a transistors |
JP4789348B2 (ja) * | 2001-05-31 | 2011-10-12 | リンテック株式会社 | 面状コイル部品、面状コイル部品の特性調整方法、idタグ、及び、idタグの共振周波数の調整方法 |
US6617679B2 (en) * | 2002-02-08 | 2003-09-09 | Advanced Energy Industries, Inc. | Semiconductor package for multiple high power transistors |
US7683480B2 (en) * | 2006-03-29 | 2010-03-23 | Freescale Semiconductor, Inc. | Methods and apparatus for a reduced inductance wirebond array |
US7948078B2 (en) * | 2006-07-25 | 2011-05-24 | Rohm Co., Ltd. | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1193519A (en) * | 1967-08-31 | 1970-06-03 | Texas Instruments Ltd | Semiconductor Devices |
US3590341A (en) * | 1968-08-19 | 1971-06-29 | Kmc Semiconductor Corp | Microwave transistor package |
US3713006A (en) * | 1971-02-08 | 1973-01-23 | Trw Inc | Hybrid transistor |
US3908185A (en) * | 1974-03-06 | 1975-09-23 | Rca Corp | High frequency semiconductor device having improved metallized patterns |
-
1976
- 1976-06-09 US US05/694,252 patent/US4042952A/en not_active Expired - Lifetime
-
1977
- 1977-05-23 GB GB21663/77A patent/GB1574497A/en not_active Expired
- 1977-06-03 CA CA279,847A patent/CA1082372A/fr not_active Expired
- 1977-06-06 JP JP6587177A patent/JPS52150969A/ja active Granted
- 1977-06-06 NL NLAANVRAGE7706232,A patent/NL182605C/xx not_active IP Right Cessation
- 1977-06-08 DE DE2726040A patent/DE2726040C3/de not_active Expired
- 1977-06-09 FR FR7717763A patent/FR2354635A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5757867B2 (fr) | 1982-12-07 |
FR2354635B1 (fr) | 1981-12-24 |
CA1082372A (fr) | 1980-07-22 |
DE2726040A1 (de) | 1977-12-15 |
GB1574497A (en) | 1980-09-10 |
NL182605C (nl) | 1988-04-05 |
NL7706232A (nl) | 1977-12-13 |
DE2726040C3 (de) | 1982-02-18 |
DE2726040B2 (de) | 1981-05-27 |
US4042952A (en) | 1977-08-16 |
NL182605B (nl) | 1987-11-02 |
JPS52150969A (en) | 1977-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |