FR2344965A1 - Semiconductor component without case - has large area contacts on both sides of chip, connected by layer of glass - Google Patents

Semiconductor component without case - has large area contacts on both sides of chip, connected by layer of glass

Info

Publication number
FR2344965A1
FR2344965A1 FR7707300A FR7707300A FR2344965A1 FR 2344965 A1 FR2344965 A1 FR 2344965A1 FR 7707300 A FR7707300 A FR 7707300A FR 7707300 A FR7707300 A FR 7707300A FR 2344965 A1 FR2344965 A1 FR 2344965A1
Authority
FR
France
Prior art keywords
chip
glass
layer
sides
large area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7707300A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2344965A1 publication Critical patent/FR2344965A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The component has a double heat sink in the form of large area contacts on both sides of the chip with >=2 zones of different conduction types. The SC chip is coated at its edge with a glass layer also covering at least partly the space between contacts. Temperature coefficient of expansion of glass matches that of the SC chip (1). The glass layer consists of sintered glass, pref. Zn-, and/or Pb Borosilicate glass, and a passivating layer is provided between the chip and the glass layer. The design provides effective sealing off from the surrounding atmos., together with a stable mechanical construction. In addn., heat dissipation is readily achieved when required.
FR7707300A 1976-03-16 1977-03-11 Semiconductor component without case - has large area contacts on both sides of chip, connected by layer of glass Withdrawn FR2344965A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762611059 DE2611059A1 (en) 1976-03-16 1976-03-16 ENCLOSURE SEMI-CONDUCTOR COMPONENT WITH DOUBLE HEAT SINK

Publications (1)

Publication Number Publication Date
FR2344965A1 true FR2344965A1 (en) 1977-10-14

Family

ID=5972617

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7707300A Withdrawn FR2344965A1 (en) 1976-03-16 1977-03-11 Semiconductor component without case - has large area contacts on both sides of chip, connected by layer of glass

Country Status (3)

Country Link
DE (1) DE2611059A1 (en)
FR (1) FR2344965A1 (en)
IT (1) IT1077691B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7809334A (en) * 1977-09-14 1979-03-16 Raytheon Co SEMICONDUCTOR MICROWAVE DEVICE WITH IMPROVED THERMAL PROPERTIES.
FR2489042A1 (en) * 1980-08-21 1982-02-26 Suwa Seikosha Kk SEMICONDUCTOR DEVICE HAVING A MULTILAYER INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING SAME
FR2538616A1 (en) * 1982-12-28 1984-06-29 Thomson Csf Method of collective manufacture of microwave frequency diodes with incorporated encapsulation and diodes thus obtained.
FR2549292A1 (en) * 1983-07-12 1985-01-18 Silicium Semiconducteur Ssc Diode mounting method.
EP0913711A1 (en) * 1997-10-29 1999-05-06 Meto International GmbH Identification element and method for its manufacture
WO2001020671A1 (en) * 1999-09-17 2001-03-22 Motorola, Inc. Semiconductor wafer level package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7809334A (en) * 1977-09-14 1979-03-16 Raytheon Co SEMICONDUCTOR MICROWAVE DEVICE WITH IMPROVED THERMAL PROPERTIES.
FR2489042A1 (en) * 1980-08-21 1982-02-26 Suwa Seikosha Kk SEMICONDUCTOR DEVICE HAVING A MULTILAYER INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING SAME
FR2538616A1 (en) * 1982-12-28 1984-06-29 Thomson Csf Method of collective manufacture of microwave frequency diodes with incorporated encapsulation and diodes thus obtained.
FR2549292A1 (en) * 1983-07-12 1985-01-18 Silicium Semiconducteur Ssc Diode mounting method.
EP0913711A1 (en) * 1997-10-29 1999-05-06 Meto International GmbH Identification element and method for its manufacture
WO2001020671A1 (en) * 1999-09-17 2001-03-22 Motorola, Inc. Semiconductor wafer level package

Also Published As

Publication number Publication date
IT1077691B (en) 1985-05-04
DE2611059A1 (en) 1977-09-29

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Legal Events

Date Code Title Description
ST Notification of lapse