FR2336798A1 - Methode de fabrication d'un circuit integre monolithique comprenant des elements lineaires et des elements a logique a injection - Google Patents

Methode de fabrication d'un circuit integre monolithique comprenant des elements lineaires et des elements a logique a injection

Info

Publication number
FR2336798A1
FR2336798A1 FR7638715A FR7638715A FR2336798A1 FR 2336798 A1 FR2336798 A1 FR 2336798A1 FR 7638715 A FR7638715 A FR 7638715A FR 7638715 A FR7638715 A FR 7638715A FR 2336798 A1 FR2336798 A1 FR 2336798A1
Authority
FR
France
Prior art keywords
elements
manufacturing
integrated circuit
circuit including
monolithic integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7638715A
Other languages
English (en)
French (fr)
Other versions
FR2336798B1 (show.php
Inventor
Hans Herrmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2336798A1 publication Critical patent/FR2336798A1/fr
Application granted granted Critical
Publication of FR2336798B1 publication Critical patent/FR2336798B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
FR7638715A 1975-12-22 1976-12-22 Methode de fabrication d'un circuit integre monolithique comprenant des elements lineaires et des elements a logique a injection Granted FR2336798A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2557911A DE2557911C2 (de) 1975-12-22 1975-12-22 Verfahren zum Herstellen einer monolithisch integrierten Schaltung

Publications (2)

Publication Number Publication Date
FR2336798A1 true FR2336798A1 (fr) 1977-07-22
FR2336798B1 FR2336798B1 (show.php) 1982-10-22

Family

ID=5965236

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638715A Granted FR2336798A1 (fr) 1975-12-22 1976-12-22 Methode de fabrication d'un circuit integre monolithique comprenant des elements lineaires et des elements a logique a injection

Country Status (4)

Country Link
DE (1) DE2557911C2 (show.php)
FR (1) FR2336798A1 (show.php)
GB (1) GB1523517A (show.php)
IT (1) IT1065296B (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008043A1 (de) * 1978-08-11 1980-02-20 Siemens Aktiengesellschaft Integrierter bipolarer Halbleiterschaltkreis

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3020609C2 (de) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1559608A (show.php) * 1967-06-30 1969-03-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008043A1 (de) * 1978-08-11 1980-02-20 Siemens Aktiengesellschaft Integrierter bipolarer Halbleiterschaltkreis

Also Published As

Publication number Publication date
DE2557911C2 (de) 1982-11-04
IT1065296B (it) 1985-02-25
GB1523517A (en) 1978-09-06
DE2557911A1 (de) 1977-06-30
FR2336798B1 (show.php) 1982-10-22

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Legal Events

Date Code Title Description
ST Notification of lapse