FR2335950A1 - Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur - Google Patents

Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur

Info

Publication number
FR2335950A1
FR2335950A1 FR7638415A FR7638415A FR2335950A1 FR 2335950 A1 FR2335950 A1 FR 2335950A1 FR 7638415 A FR7638415 A FR 7638415A FR 7638415 A FR7638415 A FR 7638415A FR 2335950 A1 FR2335950 A1 FR 2335950A1
Authority
FR
France
Prior art keywords
impurity
diffusion
carrying
semiconductor body
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7638415A
Other languages
English (en)
French (fr)
Other versions
FR2335950B1 (online.php
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50152662A external-priority patent/JPS5275267A/ja
Priority claimed from JP15266875A external-priority patent/JPS5275270A/ja
Priority claimed from JP15266175A external-priority patent/JPS5275266A/ja
Priority claimed from JP50152664A external-priority patent/JPS5814741B2/ja
Priority claimed from JP15266075A external-priority patent/JPS5275273A/ja
Priority claimed from JP50152659A external-priority patent/JPS5814740B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2335950A1 publication Critical patent/FR2335950A1/fr
Application granted granted Critical
Publication of FR2335950B1 publication Critical patent/FR2335950B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/112—Nitridation, direct, of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
FR7638415A 1975-12-19 1976-12-20 Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur Granted FR2335950A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP50152662A JPS5275267A (en) 1975-12-19 1975-12-19 Production of semiconductor device
JP15266875A JPS5275270A (en) 1975-12-19 1975-12-19 Method of diffusing impurity in semiconductor
JP15266175A JPS5275266A (en) 1975-12-19 1975-12-19 Production of semiconductor device
JP50152664A JPS5814741B2 (ja) 1975-12-19 1975-12-19 ハンドウタイチユウヘノフジユンブツカクサンホウホウ
JP15266075A JPS5275273A (en) 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film
JP50152659A JPS5814740B2 (ja) 1975-12-19 1975-12-19 ハンドウタイチユウヘノフジユンブツカクサンホウホウ

Publications (2)

Publication Number Publication Date
FR2335950A1 true FR2335950A1 (fr) 1977-07-15
FR2335950B1 FR2335950B1 (online.php) 1981-06-12

Family

ID=27553110

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638415A Granted FR2335950A1 (fr) 1975-12-19 1976-12-20 Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur

Country Status (4)

Country Link
US (1) US4102715A (online.php)
DE (1) DE2657415C2 (online.php)
FR (1) FR2335950A1 (online.php)
GB (1) GB1581726A (online.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0446532A3 (en) * 1990-02-26 1993-05-19 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795625A (en) 1980-12-04 1982-06-14 Toshiba Corp Manufacture of semiconductor device
US4782036A (en) * 1986-08-29 1988-11-01 Siemens Aktiengesellschaft Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates
IL123799A0 (en) * 1995-10-04 1998-10-30 Intel Corp Formation of source/drain from doped glass
US6333245B1 (en) 1999-12-21 2001-12-25 International Business Machines Corporation Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer
US7851339B2 (en) * 2008-05-29 2010-12-14 Promos Technologies Pte. Ltd. Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer
TWI501292B (zh) 2012-09-26 2015-09-21 財團法人工業技術研究院 形成圖案化摻雜區的方法
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109300A1 (en) * 1971-02-26 1972-09-21 Siemens Ag Formation of masking, passivating or doping coatings - or contacts - on surfaces of semiconductors
FR2191273A1 (online.php) * 1972-07-05 1974-02-01 Motorola Inc

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437533A (en) * 1966-12-13 1969-04-08 Rca Corp Method of fabricating semiconductor devices
GB1363121A (en) * 1972-04-25 1974-08-14 Ferranti Ltd Manufacture of semiconductor devices
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US4006046A (en) * 1975-04-21 1977-02-01 Trw Inc. Method for compensating for emitter-push effect in the fabrication of transistors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109300A1 (en) * 1971-02-26 1972-09-21 Siemens Ag Formation of masking, passivating or doping coatings - or contacts - on surfaces of semiconductors
FR2191273A1 (online.php) * 1972-07-05 1974-02-01 Motorola Inc

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV2419/16 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0446532A3 (en) * 1990-02-26 1993-05-19 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
GB1581726A (en) 1980-12-17
DE2657415A1 (de) 1977-07-07
DE2657415C2 (de) 1983-03-31
FR2335950B1 (online.php) 1981-06-12
US4102715A (en) 1978-07-25

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Legal Events

Date Code Title Description
ST Notification of lapse