FR2331885A1 - Procede pour la realisation sur un substrat d'une metallisation - Google Patents
Procede pour la realisation sur un substrat d'une metallisationInfo
- Publication number
- FR2331885A1 FR2331885A1 FR7633988A FR7633988A FR2331885A1 FR 2331885 A1 FR2331885 A1 FR 2331885A1 FR 7633988 A FR7633988 A FR 7633988A FR 7633988 A FR7633988 A FR 7633988A FR 2331885 A1 FR2331885 A1 FR 2331885A1
- Authority
- FR
- France
- Prior art keywords
- metallization
- substrate
- carrying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001465 metallisation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752550512 DE2550512A1 (de) | 1975-11-11 | 1975-11-11 | Verfahren zur herstellung einer metallisierung auf einem substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2331885A1 true FR2331885A1 (fr) | 1977-06-10 |
FR2331885B1 FR2331885B1 (fr) | 1983-01-14 |
Family
ID=5961412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7633988A Granted FR2331885A1 (fr) | 1975-11-11 | 1976-11-10 | Procede pour la realisation sur un substrat d'une metallisation |
Country Status (6)
Country | Link |
---|---|
US (1) | US4132813A (fr) |
JP (1) | JPS6040185B2 (fr) |
DE (1) | DE2550512A1 (fr) |
FR (1) | FR2331885A1 (fr) |
GB (1) | GB1537298A (fr) |
NL (1) | NL7612483A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3107943A1 (de) * | 1981-03-02 | 1982-09-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von loetbaren und temperfaehigen edelmetallfreien duennschichtleiterbahnen |
DE3406542A1 (de) * | 1984-02-23 | 1985-08-29 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen eines halbleiterbauelementes |
DE4028776C2 (de) * | 1990-07-03 | 1994-03-10 | Samsung Electronics Co Ltd | Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement |
US6506672B1 (en) * | 1999-06-30 | 2003-01-14 | University Of Maryland, College Park | Re-metallized aluminum bond pad, and method for making the same |
US20060186180A1 (en) * | 2005-02-24 | 2006-08-24 | Northrop Grumman Corporation | Accurate relative alignment and epoxy-free attachment of optical elements |
KR100672810B1 (ko) * | 2005-07-06 | 2007-01-22 | 썬텍 주식회사 | 면상 발열체 제조방법 및 그에 의하여 제조된 면상 발열체 |
DE102005044510B4 (de) * | 2005-09-16 | 2011-03-17 | Infineon Technologies Ag | Halbleiterbauteil mit Vorderseitenmetallisierung sowie Verfahren zu dessen Herstellung und Leistungsdiode |
US8354692B2 (en) * | 2006-03-15 | 2013-01-15 | Infineon Technologies Ag | Vertical semiconductor power switch, electronic component and methods of producing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2021025A1 (fr) * | 1968-10-18 | 1970-07-17 | Rca Corp | |
DE2143906A1 (de) * | 1971-09-02 | 1973-03-08 | Bosch Gmbh Robert | Verfahren zur herstellung einer metallisierung auf einem substrat |
FR2203169A1 (fr) * | 1972-10-12 | 1974-05-10 | Gen Electric | |
DE2340423A1 (de) * | 1973-08-09 | 1975-02-20 | Siemens Ag | Weichgeloetete kontaktanordnung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3479736A (en) * | 1966-08-31 | 1969-11-25 | Hitachi Ltd | Method of making a semiconductor device |
US3633269A (en) * | 1969-06-24 | 1972-01-11 | Telefunken Patent | Method of making contact to semiconductor devices |
US3806361A (en) * | 1972-01-24 | 1974-04-23 | Motorola Inc | Method of making electrical contacts for and passivating a semiconductor device |
US3922385A (en) * | 1973-07-02 | 1975-11-25 | Gen Motors Corp | Solderable multilayer contact for silicon semiconductor |
US3965279A (en) * | 1974-09-03 | 1976-06-22 | Bell Telephone Laboratories, Incorporated | Ohmic contacts for group III-V n-type semiconductors |
-
1975
- 1975-11-11 DE DE19752550512 patent/DE2550512A1/de not_active Ceased
-
1976
- 1976-10-22 US US05/734,770 patent/US4132813A/en not_active Expired - Lifetime
- 1976-11-08 JP JP51134015A patent/JPS6040185B2/ja not_active Expired
- 1976-11-09 GB GB46527/76A patent/GB1537298A/en not_active Expired
- 1976-11-10 FR FR7633988A patent/FR2331885A1/fr active Granted
- 1976-11-10 NL NL7612483A patent/NL7612483A/xx unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2021025A1 (fr) * | 1968-10-18 | 1970-07-17 | Rca Corp | |
DE2143906A1 (de) * | 1971-09-02 | 1973-03-08 | Bosch Gmbh Robert | Verfahren zur herstellung einer metallisierung auf einem substrat |
FR2203169A1 (fr) * | 1972-10-12 | 1974-05-10 | Gen Electric | |
DE2340423A1 (de) * | 1973-08-09 | 1975-02-20 | Siemens Ag | Weichgeloetete kontaktanordnung |
Also Published As
Publication number | Publication date |
---|---|
NL7612483A (nl) | 1977-05-13 |
JPS6040185B2 (ja) | 1985-09-10 |
GB1537298A (en) | 1978-12-29 |
FR2331885B1 (fr) | 1983-01-14 |
JPS5260583A (en) | 1977-05-19 |
DE2550512A1 (de) | 1977-05-12 |
US4132813A (en) | 1979-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |