FR2021025A1 - - Google Patents

Info

Publication number
FR2021025A1
FR2021025A1 FR6935707A FR6935707A FR2021025A1 FR 2021025 A1 FR2021025 A1 FR 2021025A1 FR 6935707 A FR6935707 A FR 6935707A FR 6935707 A FR6935707 A FR 6935707A FR 2021025 A1 FR2021025 A1 FR 2021025A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6935707A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2021025A1 publication Critical patent/FR2021025A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
FR6935707A 1968-10-18 1969-10-17 Withdrawn FR2021025A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76871968A 1968-10-18 1968-10-18

Publications (1)

Publication Number Publication Date
FR2021025A1 true FR2021025A1 (fr) 1970-07-17

Family

ID=25083306

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6935707A Withdrawn FR2021025A1 (fr) 1968-10-18 1969-10-17

Country Status (5)

Country Link
US (1) US3579375A (fr)
JP (1) JPS493025B1 (fr)
DE (1) DE1952499A1 (fr)
FR (1) FR2021025A1 (fr)
GB (1) GB1227519A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2331885A1 (fr) * 1975-11-11 1977-06-10 Bosch Gmbh Robert Procede pour la realisation sur un substrat d'une metallisation

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772077A (en) * 1971-04-06 1973-11-13 Ferranti Ltd Semiconductor devices
US3922385A (en) * 1973-07-02 1975-11-25 Gen Motors Corp Solderable multilayer contact for silicon semiconductor
US4022930A (en) * 1975-05-30 1977-05-10 Bell Telephone Laboratories, Incorporated Multilevel metallization for integrated circuits
US4122215A (en) * 1976-12-27 1978-10-24 Bell Telephone Laboratories, Incorporated Electroless deposition of nickel on a masked aluminum surface
US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
US4235648A (en) * 1979-04-05 1980-11-25 Motorola, Inc. Method for immersion plating very thin films of aluminum
US4407860A (en) * 1981-06-30 1983-10-04 International Business Machines Corporation Process for producing an improved quality electrolessly deposited nickel layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2331885A1 (fr) * 1975-11-11 1977-06-10 Bosch Gmbh Robert Procede pour la realisation sur un substrat d'une metallisation

Also Published As

Publication number Publication date
DE1952499A1 (de) 1970-10-15
GB1227519A (fr) 1971-04-07
JPS493025B1 (fr) 1974-01-24
US3579375A (en) 1971-05-18

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Legal Events

Date Code Title Description
ST Notification of lapse