FR2328509A1 - Procede pour faire croitre un barreau de materiau cristallin, notamment silicium avec une teneur en oxygene controlee - Google Patents

Procede pour faire croitre un barreau de materiau cristallin, notamment silicium avec une teneur en oxygene controlee

Info

Publication number
FR2328509A1
FR2328509A1 FR7623756A FR7623756A FR2328509A1 FR 2328509 A1 FR2328509 A1 FR 2328509A1 FR 7623756 A FR7623756 A FR 7623756A FR 7623756 A FR7623756 A FR 7623756A FR 2328509 A1 FR2328509 A1 FR 2328509A1
Authority
FR
France
Prior art keywords
growing
bar
oxygen content
crystalline material
controlled oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7623756A
Other languages
English (en)
French (fr)
Other versions
FR2328509B1 (en:Method
Inventor
William J Patrick
Wolfgang A Westdorp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2328509A1 publication Critical patent/FR2328509A1/fr
Application granted granted Critical
Publication of FR2328509B1 publication Critical patent/FR2328509B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/916—Oxygen testing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR7623756A 1975-10-22 1976-07-28 Procede pour faire croitre un barreau de materiau cristallin, notamment silicium avec une teneur en oxygene controlee Granted FR2328509A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/624,618 US4040895A (en) 1975-10-22 1975-10-22 Control of oxygen in silicon crystals

Publications (2)

Publication Number Publication Date
FR2328509A1 true FR2328509A1 (fr) 1977-05-20
FR2328509B1 FR2328509B1 (en:Method) 1979-07-06

Family

ID=24502676

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7623756A Granted FR2328509A1 (fr) 1975-10-22 1976-07-28 Procede pour faire croitre un barreau de materiau cristallin, notamment silicium avec une teneur en oxygene controlee

Country Status (7)

Country Link
US (1) US4040895A (en:Method)
JP (1) JPS5252185A (en:Method)
CA (1) CA1067800A (en:Method)
DE (1) DE2639707C2 (en:Method)
FR (1) FR2328509A1 (en:Method)
GB (1) GB1519725A (en:Method)
IT (1) IT1068285B (en:Method)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042901A1 (fr) * 1980-06-26 1982-01-06 International Business Machines Corporation Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski
EP0055619A1 (en) * 1980-12-29 1982-07-07 Monsanto Company Method for regulating concentration and distribution of oxygen in Czochralski grown silicon
EP0435440A1 (en) * 1989-11-24 1991-07-03 Shin-Etsu Handotai Company Limited Method for growing antimony-doped silicon single crystals
EP0419061A3 (en) * 1989-09-19 1991-07-10 Shin-Etsu Handotai Company, Limited Method for pulling a silicon single crystal
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
US4436577A (en) 1980-12-29 1984-03-13 Monsanto Company Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4545849A (en) * 1983-03-03 1985-10-08 Motorola Inc. Method for control of oxygen in silicon crystals
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
US5135218A (en) * 1990-12-21 1992-08-04 Mcgovern James R Pool game table
JPH0532480A (ja) * 1991-02-20 1993-02-09 Sumitomo Metal Ind Ltd 結晶成長方法
WO1995007546A1 (fr) * 1993-09-09 1995-03-16 Soviet-German Joint Venture 'mamt' Procede de determination de la concentration d'oxygene dans des cristaux de silicium
US5474020A (en) * 1994-05-06 1995-12-12 Texas Instruments Incorporated Oxygen precipitation control in czochralski-grown silicon cyrstals
US5820672A (en) * 1994-05-09 1998-10-13 Texas Instruments Incorporated OISF control in czochralski-grown crystals
US5795381A (en) * 1996-09-09 1998-08-18 Memc Electrical Materials, Inc. SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon
EP0879903B1 (en) 1997-05-21 2001-12-12 Shin-Etsu Handotai Company Limited Silicon seed crystal, method of manufacturing the same, and method of manufacturing a silicon monocrystal through use of the seed crystal
US5911825A (en) * 1997-09-30 1999-06-15 Seh America, Inc. Low oxygen heater
EP0947611A3 (en) * 1998-03-17 2002-03-20 Shin-Etsu Handotai Company Limited A method for producing a silicon single crystal and the silicon single crystal produced thereby
RU2193079C1 (ru) * 1999-04-14 2002-11-20 Ремизов Олег Алексеевич Способ получения монокристаллического кремния
JP4764007B2 (ja) * 2002-11-12 2011-08-31 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド ルツボの回転を利用して温度勾配を制御し単結晶シリコンを製造する方法
CN101935871A (zh) * 2010-09-04 2011-01-05 山西天能科技有限公司 一种降低单晶硅位错的方法
CN102011178B (zh) * 2010-12-30 2012-10-03 宁晋晶兴电子材料有限公司 一种降低单晶硅内部气孔的生产方法
CN107268080B (zh) * 2017-07-06 2019-08-02 锦州神工半导体股份有限公司 一种大直径无双棱线单晶硅的提拉生长方法
CN109576785A (zh) * 2018-12-29 2019-04-05 徐州鑫晶半导体科技有限公司 调节单晶硅生长过程中氧含量的方法
US12351938B2 (en) 2022-02-10 2025-07-08 Globalwafers Co., Ltd. Methods for producing a product ingot having low oxygen content

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
NL145151B (nl) * 1965-08-05 1975-03-17 Tno Werkwijze en inrichting voor zonesmelten.
US3873463A (en) * 1972-02-23 1975-03-25 Philips Corp Method of and device for manufacturing substituted single crystals
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042901A1 (fr) * 1980-06-26 1982-01-06 International Business Machines Corporation Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski
EP0055619A1 (en) * 1980-12-29 1982-07-07 Monsanto Company Method for regulating concentration and distribution of oxygen in Czochralski grown silicon
EP0419061A3 (en) * 1989-09-19 1991-07-10 Shin-Etsu Handotai Company, Limited Method for pulling a silicon single crystal
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
EP0435440A1 (en) * 1989-11-24 1991-07-03 Shin-Etsu Handotai Company Limited Method for growing antimony-doped silicon single crystals
US5423283A (en) * 1989-11-24 1995-06-13 Shin-Etsu Handotai Co., Ltd. Method for growing antimony-doped silicon single crystal
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
US5766341A (en) * 1995-06-09 1998-06-16 Memc Electric Materials, Inc. Method for rotating a crucible of a crystal pulling machine

Also Published As

Publication number Publication date
DE2639707A1 (de) 1977-04-28
IT1068285B (it) 1985-03-21
JPS5252185A (en) 1977-04-26
FR2328509B1 (en:Method) 1979-07-06
DE2639707C2 (de) 1983-08-18
US4040895A (en) 1977-08-09
JPS5329677B2 (en:Method) 1978-08-22
CA1067800A (en) 1979-12-11
GB1519725A (en) 1978-08-02

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Legal Events

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