FR2323272A1 - Circuit de compensation agissant sur les tensions de porte de transistors a effet de champ utilises comme charge - Google Patents

Circuit de compensation agissant sur les tensions de porte de transistors a effet de champ utilises comme charge

Info

Publication number
FR2323272A1
FR2323272A1 FR7623631A FR7623631A FR2323272A1 FR 2323272 A1 FR2323272 A1 FR 2323272A1 FR 7623631 A FR7623631 A FR 7623631A FR 7623631 A FR7623631 A FR 7623631A FR 2323272 A1 FR2323272 A1 FR 2323272A1
Authority
FR
France
Prior art keywords
tensions
loads
door
field
compensation circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7623631A
Other languages
English (en)
Other versions
FR2323272B1 (fr
Inventor
Robert J De Filippi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2323272A1 publication Critical patent/FR2323272A1/fr
Application granted granted Critical
Publication of FR2323272B1 publication Critical patent/FR2323272B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
FR7623631A 1975-09-04 1976-07-27 Circuit de compensation agissant sur les tensions de porte de transistors a effet de champ utilises comme charge Granted FR2323272A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/610,202 US4016434A (en) 1975-09-04 1975-09-04 Load gate compensator circuit

Publications (2)

Publication Number Publication Date
FR2323272A1 true FR2323272A1 (fr) 1977-04-01
FR2323272B1 FR2323272B1 (fr) 1979-09-28

Family

ID=24444096

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7623631A Granted FR2323272A1 (fr) 1975-09-04 1976-07-27 Circuit de compensation agissant sur les tensions de porte de transistors a effet de champ utilises comme charge

Country Status (5)

Country Link
US (1) US4016434A (fr)
JP (1) JPS5232255A (fr)
DE (1) DE2637808C2 (fr)
FR (1) FR2323272A1 (fr)
GB (1) GB1540118A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112443A1 (fr) * 1982-10-29 1984-07-04 International Business Machines Corporation Circuit générateur de tension de référence

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115710A (en) * 1976-12-27 1978-09-19 Texas Instruments Incorporated Substrate bias for MOS integrated circuit
US4097844A (en) * 1977-04-04 1978-06-27 Hughes Aircraft Company Output circuit for a digital correlator
US4199693A (en) * 1978-02-07 1980-04-22 Burroughs Corporation Compensated MOS timing network
US4260909A (en) * 1978-08-30 1981-04-07 Bell Telephone Laboratories, Incorporated Back gate bias voltage generator circuit
JPS55121440A (en) * 1979-03-15 1980-09-18 Hajime Nakato Method and apparatus for recovering waste heat of waste washing water in developing device
US4275313A (en) * 1979-04-09 1981-06-23 Bell Telephone Laboratories, Incorporated Current limiting output circuit with output feedback
US4326134A (en) * 1979-08-31 1982-04-20 Xicor, Inc. Integrated rise-time regulated voltage generator systems
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JPS59149427A (ja) * 1983-02-16 1984-08-27 Mitsubishi Electric Corp 半導体装置
JPS59218042A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体集積回路
JPS6388942U (fr) * 1986-12-01 1988-06-09
US5059835A (en) * 1987-06-04 1991-10-22 Ncr Corporation Cmos circuit with programmable input threshold
EP0334983A1 (fr) * 1988-03-31 1989-10-04 Deutsche ITT Industries GmbH Circuit intégré CMOS/NMOS
US5051630A (en) * 1990-03-12 1991-09-24 Tektronix, Inc. Accurate delay generator having a compensation feature for power supply voltage and semiconductor process variations
US5892409A (en) * 1997-07-28 1999-04-06 International Business Machines Corporation CMOS process compensation circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2292280A1 (fr) * 1974-11-21 1976-06-18 Ibm Compensateur en technologie lsi pour remedier aux variations de certains parametres dues au procede de fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
US3823332A (en) * 1970-01-30 1974-07-09 Rca Corp Mos fet reference voltage supply
US3702943A (en) * 1971-11-05 1972-11-14 Rca Corp Field-effect transistor circuit for detecting changes in voltage level
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
US3875430A (en) * 1973-07-16 1975-04-01 Intersil Inc Current source biasing circuit
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2292280A1 (fr) * 1974-11-21 1976-06-18 Ibm Compensateur en technologie lsi pour remedier aux variations de certains parametres dues au procede de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, VOLUME 14, NO. 4, SEPTEMBRE 1971, NEW YORK, J.M. LEE, "FET DELAY CIRCUIT COMPENSATED FOR DEVICE PARAMETER VARIATIONS", PAGES 1082 A 1083 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112443A1 (fr) * 1982-10-29 1984-07-04 International Business Machines Corporation Circuit générateur de tension de référence

Also Published As

Publication number Publication date
DE2637808C2 (de) 1985-07-18
FR2323272B1 (fr) 1979-09-28
US4016434A (en) 1977-04-05
GB1540118A (en) 1979-02-07
JPS5232255A (en) 1977-03-11
DE2637808A1 (de) 1977-03-10
JPS566735B2 (fr) 1981-02-13

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Legal Events

Date Code Title Description
ST Notification of lapse