FR2322458A1 - Thyristor pouvant etre commande par la lumiere - Google Patents

Thyristor pouvant etre commande par la lumiere

Info

Publication number
FR2322458A1
FR2322458A1 FR7625978A FR7625978A FR2322458A1 FR 2322458 A1 FR2322458 A1 FR 2322458A1 FR 7625978 A FR7625978 A FR 7625978A FR 7625978 A FR7625978 A FR 7625978A FR 2322458 A1 FR2322458 A1 FR 2322458A1
Authority
FR
France
Prior art keywords
thyristor
controlled
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7625978A
Other languages
English (en)
French (fr)
Other versions
FR2322458B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2322458A1 publication Critical patent/FR2322458A1/fr
Application granted granted Critical
Publication of FR2322458B1 publication Critical patent/FR2322458B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263Photothyristors
FR7625978A 1975-08-29 1976-08-27 Thyristor pouvant etre commande par la lumiere Granted FR2322458A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2538549A DE2538549C2 (de) 1975-08-29 1975-08-29 Mit Licht steuerbarer Thyristor

Publications (2)

Publication Number Publication Date
FR2322458A1 true FR2322458A1 (fr) 1977-03-25
FR2322458B1 FR2322458B1 (enrdf_load_stackoverflow) 1982-10-22

Family

ID=5955165

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7625978A Granted FR2322458A1 (fr) 1975-08-29 1976-08-27 Thyristor pouvant etre commande par la lumiere

Country Status (7)

Country Link
US (1) US4060826A (enrdf_load_stackoverflow)
JP (1) JPS5229189A (enrdf_load_stackoverflow)
CA (1) CA1064150A (enrdf_load_stackoverflow)
DE (1) DE2538549C2 (enrdf_load_stackoverflow)
FR (1) FR2322458A1 (enrdf_load_stackoverflow)
GB (1) GB1544495A (enrdf_load_stackoverflow)
SE (1) SE420874B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304032A1 (de) * 1987-08-20 1989-02-22 Siemens Aktiengesellschaft Lichtsteuerbarer Thyristor

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
CH614811A5 (en) * 1977-04-15 1979-12-14 Bbc Brown Boveri & Cie Thyristor
DE2725265A1 (de) * 1976-06-04 1977-12-08 Tokyo Shibaura Electric Co Halbleiter-leuchtanzeigevorrichtung
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
US4207583A (en) * 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
US4186409A (en) * 1978-08-11 1980-01-29 Westinghouse Electric Corp. Light activated silicon switch
JPS57192075A (en) * 1981-05-20 1982-11-26 Fuji Electric Corp Res & Dev Ltd Photo trigger thyristor
JPS57196568A (en) * 1981-05-27 1982-12-02 Fuji Electric Corp Res & Dev Ltd Photo trigger thyristor
JPS58101460A (ja) * 1981-12-11 1983-06-16 Mitsubishi Electric Corp 光トリガ・サイリスタ
US4595939A (en) * 1982-11-15 1986-06-17 Tokyo Shibaura Denki Kabushiki Kaisha Radiation-controllable thyristor with multiple, non-concentric amplified stages
JPS6064469A (ja) * 1983-09-19 1985-04-13 Hitachi Ltd 光サイリスタ
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2050630A5 (enrdf_load_stackoverflow) * 1969-06-19 1971-04-02 V Elektrotekhni
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
DE2346237A1 (de) * 1973-09-13 1975-03-27 Siemens Ag Thyristor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
SE352779B (enrdf_load_stackoverflow) * 1967-12-28 1973-01-08 Asea Ab
JPS508315B1 (enrdf_load_stackoverflow) * 1970-02-20 1975-04-03
DE2300754A1 (de) * 1973-01-08 1974-07-11 Siemens Ag Thyristor
DE2346256C3 (de) * 1973-09-13 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Thyristor
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability
JPS50123282A (enrdf_load_stackoverflow) * 1974-03-15 1975-09-27
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2050630A5 (enrdf_load_stackoverflow) * 1969-06-19 1971-04-02 V Elektrotekhni
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
DE2346237A1 (de) * 1973-09-13 1975-03-27 Siemens Ag Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304032A1 (de) * 1987-08-20 1989-02-22 Siemens Aktiengesellschaft Lichtsteuerbarer Thyristor

Also Published As

Publication number Publication date
SE420874B (sv) 1981-11-02
DE2538549A1 (de) 1977-03-03
JPS5229189A (en) 1977-03-04
FR2322458B1 (enrdf_load_stackoverflow) 1982-10-22
GB1544495A (en) 1979-04-19
DE2538549C2 (de) 1985-06-13
SE7609343L (sv) 1977-03-01
US4060826A (en) 1977-11-29
CA1064150A (en) 1979-10-09

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