FR2320632A1 - Ameliorations apportees aux procedes de fabrication des dispositifs a semi-conducteurs, notamment pour l'autoalignement de la porte d'un transistor a effet de champ - Google Patents

Ameliorations apportees aux procedes de fabrication des dispositifs a semi-conducteurs, notamment pour l'autoalignement de la porte d'un transistor a effet de champ

Info

Publication number
FR2320632A1
FR2320632A1 FR7624034A FR7624034A FR2320632A1 FR 2320632 A1 FR2320632 A1 FR 2320632A1 FR 7624034 A FR7624034 A FR 7624034A FR 7624034 A FR7624034 A FR 7624034A FR 2320632 A1 FR2320632 A1 FR 2320632A1
Authority
FR
France
Prior art keywords
alignment
door
self
effect transistor
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7624034A
Other languages
English (en)
Other versions
FR2320632B3 (fr
Inventor
Marina Buiatti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leonardo SpA
Original Assignee
Selenia Industrie Elettroniche Associate SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selenia Industrie Elettroniche Associate SpA filed Critical Selenia Industrie Elettroniche Associate SpA
Publication of FR2320632A1 publication Critical patent/FR2320632A1/fr
Application granted granted Critical
Publication of FR2320632B3 publication Critical patent/FR2320632B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7624034A 1975-08-08 1976-08-06 Ameliorations apportees aux procedes de fabrication des dispositifs a semi-conducteurs, notamment pour l'autoalignement de la porte d'un transistor a effet de champ Granted FR2320632A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT50889/75A IT1041193B (it) 1975-08-08 1975-08-08 Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor

Publications (2)

Publication Number Publication Date
FR2320632A1 true FR2320632A1 (fr) 1977-03-04
FR2320632B3 FR2320632B3 (fr) 1979-05-04

Family

ID=11274039

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7624034A Granted FR2320632A1 (fr) 1975-08-08 1976-08-06 Ameliorations apportees aux procedes de fabrication des dispositifs a semi-conducteurs, notamment pour l'autoalignement de la porte d'un transistor a effet de champ

Country Status (5)

Country Link
US (1) US4048712A (fr)
DE (1) DE2635369A1 (fr)
FR (1) FR2320632A1 (fr)
GB (1) GB1510293A (fr)
IT (1) IT1041193B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824026A1 (de) * 1978-06-01 1979-12-20 Licentia Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
EP0106174A2 (fr) * 1982-09-16 1984-04-25 Hitachi, Ltd. Procédé de fabrication d'un transistor à effet de champ à grille Schottky

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2348574A1 (fr) * 1976-04-16 1977-11-10 Thomson Csf Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes
US4253229A (en) * 1978-04-27 1981-03-03 Xerox Corporation Self-aligned narrow gate MESFET process
DE2821975C2 (de) * 1978-05-19 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
GB1602498A (en) * 1978-05-31 1981-11-11 Secr Defence Fet devices and their fabrication
GB1603260A (en) * 1978-05-31 1981-11-25 Secr Defence Devices and their fabrication
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4358891A (en) * 1979-06-22 1982-11-16 Burroughs Corporation Method of forming a metal semiconductor field effect transistor
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
US4310570A (en) * 1979-12-20 1982-01-12 Eaton Corporation Field-effect transistors with micron and submicron gate lengths
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET
GB2127751B (en) * 1982-10-06 1986-04-23 Plessey Co Plc Producing narrow features in electrical devices
US4400257A (en) * 1982-12-21 1983-08-23 Rca Corporation Method of forming metal lines
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
US4985369A (en) * 1987-01-21 1991-01-15 Ford Microelectronics, Inc. Method for making self-aligned ohmic contacts
US4829347A (en) * 1987-02-06 1989-05-09 American Telephone And Telegraph Company, At&T Bell Laboratories Process for making indium gallium arsenide devices
US4927782A (en) * 1989-06-27 1990-05-22 The United States Of America As Represented By The Secretary Of The Navy Method of making self-aligned GaAs/AlGaAs FET's
US5011785A (en) * 1990-10-30 1991-04-30 The United States Of America As Represented By The Secretary Of The Navy Insulator assisted self-aligned gate junction

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1262000A (en) * 1968-11-22 1972-02-02 Tokyo Shibaura Electric Co A semiconductor device and a method for manufacturing the same
DE2037589C3 (de) * 1970-07-29 1974-02-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Sperrschicht-Feldeffekttransistors
US3711745A (en) * 1971-10-06 1973-01-16 Microwave Ass Inc Low barrier height gallium arsenide microwave schottky diodes using gold-germanium alloy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824026A1 (de) * 1978-06-01 1979-12-20 Licentia Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
EP0106174A2 (fr) * 1982-09-16 1984-04-25 Hitachi, Ltd. Procédé de fabrication d'un transistor à effet de champ à grille Schottky
EP0106174A3 (en) * 1982-09-16 1986-07-23 Hitachi, Ltd. Self-aligned manufacture of fet

Also Published As

Publication number Publication date
DE2635369A1 (de) 1977-02-24
IT1041193B (it) 1980-01-10
US4048712A (en) 1977-09-20
GB1510293A (en) 1978-05-10
FR2320632B3 (fr) 1979-05-04

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