FR2317771A1 - Etage inverseur d'un circuit logique integre a injection - Google Patents

Etage inverseur d'un circuit logique integre a injection

Info

Publication number
FR2317771A1
FR2317771A1 FR7619764A FR7619764A FR2317771A1 FR 2317771 A1 FR2317771 A1 FR 2317771A1 FR 7619764 A FR7619764 A FR 7619764A FR 7619764 A FR7619764 A FR 7619764A FR 2317771 A1 FR2317771 A1 FR 2317771A1
Authority
FR
France
Prior art keywords
logic circuit
integrated injection
inverter stage
injection logic
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7619764A
Other languages
English (en)
French (fr)
Other versions
FR2317771B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2317771A1 publication Critical patent/FR2317771A1/fr
Application granted granted Critical
Publication of FR2317771B1 publication Critical patent/FR2317771B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
FR7619764A 1975-07-07 1976-06-29 Etage inverseur d'un circuit logique integre a injection Granted FR2317771A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2530288A DE2530288C3 (de) 1975-07-07 1975-07-07 Inverter in integrierter Injektionslogik

Publications (2)

Publication Number Publication Date
FR2317771A1 true FR2317771A1 (fr) 1977-02-04
FR2317771B1 FR2317771B1 (OSRAM) 1980-08-22

Family

ID=5950887

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7619764A Granted FR2317771A1 (fr) 1975-07-07 1976-06-29 Etage inverseur d'un circuit logique integre a injection

Country Status (7)

Country Link
US (1) US4131806A (OSRAM)
CA (1) CA1051982A (OSRAM)
CH (1) CH609171A5 (OSRAM)
DE (1) DE2530288C3 (OSRAM)
FR (1) FR2317771A1 (OSRAM)
GB (1) GB1551760A (OSRAM)
IT (1) IT1066959B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392499A1 (fr) * 1977-05-25 1978-12-22 Western Electric Co Dispositif semi-conducteur en logique integree a injection

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131233A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Logic circuit
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
US5122684A (en) * 1991-03-04 1992-06-16 Motorola, Inc. Current-injection logic (I2 L) driver for increasing fan-out

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569800A (en) * 1968-09-04 1971-03-09 Ibm Resistively isolated integrated current switch
US3573573A (en) * 1968-12-23 1971-04-06 Ibm Memory cell with buried load impedances
US3879745A (en) * 1969-11-11 1975-04-22 Philips Corp Semiconductor device
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3654530A (en) * 1970-06-22 1972-04-04 Ibm Integrated clamping circuit
US3631309A (en) * 1970-07-23 1971-12-28 Semiconductor Elect Memories Integrated circuit bipolar memory cell
GB1507299A (en) * 1974-03-26 1978-04-12 Signetics Corp Integrated semiconductor devices
DE2426447C2 (de) * 1974-05-31 1982-05-27 Ibm Deutschland Gmbh, 7000 Stuttgart Komplementäre Transistorschaltung zur Durchführung boole'scher Verknüpfungen
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392499A1 (fr) * 1977-05-25 1978-12-22 Western Electric Co Dispositif semi-conducteur en logique integree a injection

Also Published As

Publication number Publication date
CH609171A5 (OSRAM) 1979-02-15
GB1551760A (en) 1979-08-30
DE2530288A1 (de) 1977-01-13
IT1066959B (it) 1985-03-12
CA1051982A (en) 1979-04-03
DE2530288C3 (de) 1982-02-18
FR2317771B1 (OSRAM) 1980-08-22
US4131806A (en) 1978-12-26
DE2530288B2 (de) 1981-05-27

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Legal Events

Date Code Title Description
ST Notification of lapse