CH609171A5 - - Google Patents

Info

Publication number
CH609171A5
CH609171A5 CH683276A CH683276A CH609171A5 CH 609171 A5 CH609171 A5 CH 609171A5 CH 683276 A CH683276 A CH 683276A CH 683276 A CH683276 A CH 683276A CH 609171 A5 CH609171 A5 CH 609171A5
Authority
CH
Switzerland
Application number
CH683276A
Inventor
Nikolaus Kirschner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH609171A5 publication Critical patent/CH609171A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
CH683276A 1975-07-07 1976-06-01 CH609171A5 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2530288A DE2530288C3 (de) 1975-07-07 1975-07-07 Inverter in integrierter Injektionslogik

Publications (1)

Publication Number Publication Date
CH609171A5 true CH609171A5 (xx) 1979-02-15

Family

ID=5950887

Family Applications (1)

Application Number Title Priority Date Filing Date
CH683276A CH609171A5 (xx) 1975-07-07 1976-06-01

Country Status (7)

Country Link
US (1) US4131806A (xx)
CA (1) CA1051982A (xx)
CH (1) CH609171A5 (xx)
DE (1) DE2530288C3 (xx)
FR (1) FR2317771A1 (xx)
GB (1) GB1551760A (xx)
IT (1) IT1066959B (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156246A (en) * 1977-05-25 1979-05-22 Bell Telephone Laboratories, Incorporated Combined ohmic and Schottky output transistors for logic circuit
JPS56131233A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Logic circuit
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
US5122684A (en) * 1991-03-04 1992-06-16 Motorola, Inc. Current-injection logic (I2 L) driver for increasing fan-out

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569800A (en) * 1968-09-04 1971-03-09 Ibm Resistively isolated integrated current switch
US3573573A (en) * 1968-12-23 1971-04-06 Ibm Memory cell with buried load impedances
US3879745A (en) * 1969-11-11 1975-04-22 Philips Corp Semiconductor device
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3654530A (en) * 1970-06-22 1972-04-04 Ibm Integrated clamping circuit
US3631309A (en) * 1970-07-23 1971-12-28 Semiconductor Elect Memories Integrated circuit bipolar memory cell
GB1507061A (en) * 1974-03-26 1978-04-12 Signetics Corp Semiconductors
DE2426447C2 (de) * 1974-05-31 1982-05-27 Ibm Deutschland Gmbh, 7000 Stuttgart Komplementäre Transistorschaltung zur Durchführung boole'scher Verknüpfungen
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.

Also Published As

Publication number Publication date
DE2530288A1 (de) 1977-01-13
GB1551760A (en) 1979-08-30
FR2317771B1 (xx) 1980-08-22
DE2530288C3 (de) 1982-02-18
IT1066959B (it) 1985-03-12
FR2317771A1 (fr) 1977-02-04
DE2530288B2 (de) 1981-05-27
CA1051982A (en) 1979-04-03
US4131806A (en) 1978-12-26

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Legal Events

Date Code Title Description
PL Patent ceased