FR2303383A1 - Transistor a effet de champ a plat - Google Patents

Transistor a effet de champ a plat

Info

Publication number
FR2303383A1
FR2303383A1 FR7506965A FR7506965A FR2303383A1 FR 2303383 A1 FR2303383 A1 FR 2303383A1 FR 7506965 A FR7506965 A FR 7506965A FR 7506965 A FR7506965 A FR 7506965A FR 2303383 A1 FR2303383 A1 FR 2303383A1
Authority
FR
France
Prior art keywords
bars
layer
support
type
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7506965A
Other languages
English (en)
French (fr)
Other versions
FR2303383B1 (enExample
Inventor
Rene Barandon
Pierre Laurenceau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Priority to FR7506965A priority Critical patent/FR2303383A1/fr
Publication of FR2303383A1 publication Critical patent/FR2303383A1/fr
Application granted granted Critical
Publication of FR2303383B1 publication Critical patent/FR2303383B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
FR7506965A 1975-03-06 1975-03-06 Transistor a effet de champ a plat Granted FR2303383A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7506965A FR2303383A1 (fr) 1975-03-06 1975-03-06 Transistor a effet de champ a plat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7506965A FR2303383A1 (fr) 1975-03-06 1975-03-06 Transistor a effet de champ a plat

Publications (2)

Publication Number Publication Date
FR2303383A1 true FR2303383A1 (fr) 1976-10-01
FR2303383B1 FR2303383B1 (enExample) 1978-02-24

Family

ID=9152179

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7506965A Granted FR2303383A1 (fr) 1975-03-06 1975-03-06 Transistor a effet de champ a plat

Country Status (1)

Country Link
FR (1) FR2303383A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
EP0153902A3 (de) * 1984-02-08 1987-08-19 Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung Halbleiter-Leistungsbauelement, insbesondere Thyristor und Gridistor, sowie Verfahren zu dessen Herstellung
EP0703629A3 (de) * 1994-08-30 1996-11-13 Daimler Benz Ag Vertikaler Feldeffekt-Transistor hoher Leistung
WO2025023985A1 (en) * 2023-07-25 2025-01-30 Semiconductor Components Industries, Llc Planar jfet device with reduced gate resistance

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
EP0077706A1 (fr) * 1981-10-16 1983-04-27 Thomson-Csf Transistor à effet de champ à canal vertical
US4529997A (en) * 1981-10-16 1985-07-16 Thomson-Csf Permeable base transistor
EP0153902A3 (de) * 1984-02-08 1987-08-19 Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung Halbleiter-Leistungsbauelement, insbesondere Thyristor und Gridistor, sowie Verfahren zu dessen Herstellung
EP0703629A3 (de) * 1994-08-30 1996-11-13 Daimler Benz Ag Vertikaler Feldeffekt-Transistor hoher Leistung
WO2025023985A1 (en) * 2023-07-25 2025-01-30 Semiconductor Components Industries, Llc Planar jfet device with reduced gate resistance

Also Published As

Publication number Publication date
FR2303383B1 (enExample) 1978-02-24

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Legal Events

Date Code Title Description
ST Notification of lapse