FR2302568A1 - Semiconductor read-write memory - with matrix employing dynamic storage elements and regenerating means operated via threshold circuit - Google Patents

Semiconductor read-write memory - with matrix employing dynamic storage elements and regenerating means operated via threshold circuit

Info

Publication number
FR2302568A1
FR2302568A1 FR7605574A FR7605574A FR2302568A1 FR 2302568 A1 FR2302568 A1 FR 2302568A1 FR 7605574 A FR7605574 A FR 7605574A FR 7605574 A FR7605574 A FR 7605574A FR 2302568 A1 FR2302568 A1 FR 2302568A1
Authority
FR
France
Prior art keywords
storage elements
dynamic storage
threshold circuit
regenerating means
write memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7605574A
Other languages
French (fr)
Other versions
FR2302568B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752508912 external-priority patent/DE2508912C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2302568A1 publication Critical patent/FR2302568A1/en
Application granted granted Critical
Publication of FR2302568B1 publication Critical patent/FR2302568B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

The semiconductor store has at least one storage matrix, using dynamic storage elements, for storing binary data, an address coder, for addressing and writing in the data, a read-out device for retrieving the stored data and regenerating means, operated by a release signal, to regenerate the stored data. A circuit element (1) has an output supplying a reference voltage representing the decay of the stored data, to a threshold circuit (3), which provides a release signal for the regeneration means when the reference voltage reaches a critical value. A setting device (2) for the circuit element (1) also operates in response to the release signal.
FR7605574A 1975-02-28 1976-02-27 Semiconductor read-write memory - with matrix employing dynamic storage elements and regenerating means operated via threshold circuit Granted FR2302568A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752508912 DE2508912C3 (en) 1975-02-28 Electronic read and write semiconductor memory arrangement with random access

Publications (2)

Publication Number Publication Date
FR2302568A1 true FR2302568A1 (en) 1976-09-24
FR2302568B1 FR2302568B1 (en) 1979-02-02

Family

ID=5940162

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605574A Granted FR2302568A1 (en) 1975-02-28 1976-02-27 Semiconductor read-write memory - with matrix employing dynamic storage elements and regenerating means operated via threshold circuit

Country Status (2)

Country Link
FR (1) FR2302568A1 (en)
IT (1) IT1055374B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013523A1 (en) * 1978-12-27 1980-07-23 COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) Method for writing a pilot character in an electric-charge storing memory and device obtained by this method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARTICLE: "PROVIDING NON-VOLATILE LSI MEMORY" PAR APPELT ) *
CONFERENCE US "IEEE COMPUTER SOCIETY INTERNATIONAL CONFERENCE", COMPCON-72, 12-14 SEPTEMBRE 1972, PAGES 139 ET 140 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013523A1 (en) * 1978-12-27 1980-07-23 COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) Method for writing a pilot character in an electric-charge storing memory and device obtained by this method
FR2445586A1 (en) * 1978-12-27 1980-07-25 Cii Honeywell Bull METHOD FOR RECORDING AN INDICATOR CHARACTER IN A MEMORY WITH ELECTRIC CHARGE STORAGE AND DEVICE OBTAINED BY THIS METHOD

Also Published As

Publication number Publication date
DE2508912B2 (en) 1976-12-16
FR2302568B1 (en) 1979-02-02
DE2508912A1 (en) 1976-09-09
IT1055374B (en) 1981-12-21

Similar Documents

Publication Publication Date Title
KR840002549A (en) Initial program load method
DE69133530D1 (en) Disk playback device
JPS5250132A (en) Information processing control unit
JPS57111893A (en) Relieving system of defective memory
FR2302568A1 (en) Semiconductor read-write memory - with matrix employing dynamic storage elements and regenerating means operated via threshold circuit
JPS57191893A (en) Control system for life of earom
JPS5641593A (en) Semiconductor memory unit
JPS57212604A (en) Magnetic disk device
FR2312837A1 (en) Electronic storage system with permanent store - connected to data output via switching device controlled by programmable allotter (BE011276)
JPS5542383A (en) Pcm reproducer
JPS56159886A (en) Buffer memory device
EP0316867A3 (en) Semiconductor file apparatus
GB895835A (en) Improvements in or relating to digital information storage systems
JPS53123685A (en) Binary memory device
JPS5710853A (en) Memory device
JPS6434075A (en) System for recording and reproducing video signal
JPS6443860A (en) Pcm signal recording device
JPS5774887A (en) Associative memory device
KR900005309A (en) Storage module for interlacing data processing unit
JPS5641592A (en) Semiconductor memory unit
GB889788A (en) Random-access data storage and transducing unit
JPS53141518A (en) Storing system
JPS6453398A (en) Non-volatile semiconductor memory device
JPS52147028A (en) Error detection unit for memory
JPS56159885A (en) Storage device

Legal Events

Date Code Title Description
ST Notification of lapse