FR2301921A1 - Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication - Google Patents

Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication

Info

Publication number
FR2301921A1
FR2301921A1 FR7505050A FR7505050A FR2301921A1 FR 2301921 A1 FR2301921 A1 FR 2301921A1 FR 7505050 A FR7505050 A FR 7505050A FR 7505050 A FR7505050 A FR 7505050A FR 2301921 A1 FR2301921 A1 FR 2301921A1
Authority
FR
France
Prior art keywords
layer
conductivity
zener diodes
allied
manufacturing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7505050A
Other languages
English (en)
French (fr)
Other versions
FR2301921B3 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7505050A priority Critical patent/FR2301921A1/fr
Publication of FR2301921A1 publication Critical patent/FR2301921A1/fr
Application granted granted Critical
Publication of FR2301921B3 publication Critical patent/FR2301921B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H10P95/50—

Landscapes

  • Thyristors (AREA)
FR7505050A 1975-02-18 1975-02-18 Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication Granted FR2301921A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7505050A FR2301921A1 (fr) 1975-02-18 1975-02-18 Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7505050A FR2301921A1 (fr) 1975-02-18 1975-02-18 Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication

Publications (2)

Publication Number Publication Date
FR2301921A1 true FR2301921A1 (fr) 1976-09-17
FR2301921B3 FR2301921B3 (enExample) 1977-10-28

Family

ID=9151379

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7505050A Granted FR2301921A1 (fr) 1975-02-18 1975-02-18 Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication

Country Status (1)

Country Link
FR (1) FR2301921A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2707041A1 (en) * 1993-06-23 1994-12-30 Bosch Gmbh Robert Semiconductor configuration and method of manufacturing it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2707041A1 (en) * 1993-06-23 1994-12-30 Bosch Gmbh Robert Semiconductor configuration and method of manufacturing it

Also Published As

Publication number Publication date
FR2301921B3 (enExample) 1977-10-28

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Legal Events

Date Code Title Description
ST Notification of lapse