FR2295523B1 - - Google Patents

Info

Publication number
FR2295523B1
FR2295523B1 FR7528366A FR7528366A FR2295523B1 FR 2295523 B1 FR2295523 B1 FR 2295523B1 FR 7528366 A FR7528366 A FR 7528366A FR 7528366 A FR7528366 A FR 7528366A FR 2295523 B1 FR2295523 B1 FR 2295523B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7528366A
Other languages
French (fr)
Other versions
FR2295523A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742445091 external-priority patent/DE2445091A1/de
Priority claimed from DE2505824A external-priority patent/DE2505824C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2295523A1 publication Critical patent/FR2295523A1/fr
Application granted granted Critical
Publication of FR2295523B1 publication Critical patent/FR2295523B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
FR7528366A 1974-09-20 1975-09-16 Transistor a effet de champ de memorisation a porte de memorisation flottante et isolee Granted FR2295523A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19742445091 DE2445091A1 (de) 1974-09-20 1974-09-20 Speicher-fet mit isoliertem, floatendem speichergate
DE2505824A DE2505824C3 (de) 1975-02-12 1975-02-12 n-Kanal-Speicher-FET

Publications (2)

Publication Number Publication Date
FR2295523A1 FR2295523A1 (fr) 1976-07-16
FR2295523B1 true FR2295523B1 (enrdf_load_stackoverflow) 1981-10-09

Family

ID=25767730

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528366A Granted FR2295523A1 (fr) 1974-09-20 1975-09-16 Transistor a effet de champ de memorisation a porte de memorisation flottante et isolee

Country Status (9)

Country Link
JP (1) JPS5157292A (enrdf_load_stackoverflow)
BE (1) BE833631A (enrdf_load_stackoverflow)
CH (1) CH601895A5 (enrdf_load_stackoverflow)
DK (1) DK422975A (enrdf_load_stackoverflow)
FR (1) FR2295523A1 (enrdf_load_stackoverflow)
GB (1) GB1517925A (enrdf_load_stackoverflow)
IT (1) IT1042648B (enrdf_load_stackoverflow)
NL (1) NL7510943A (enrdf_load_stackoverflow)
SE (1) SE415415B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
JPS55105374A (en) * 1979-02-07 1980-08-12 Nec Corp Nonvolatile semiconductor memory
SE8301228L (sv) * 1982-03-09 1984-08-19 Rca Corp Halvledarminne med frisvevande styre
IT1201834B (it) * 1986-07-10 1989-02-02 Sgs Microelettronica Spa Dispositivo di memoria non volatile a semiconduttore

Also Published As

Publication number Publication date
SE7510484L (sv) 1976-05-17
NL7510943A (nl) 1976-03-23
FR2295523A1 (fr) 1976-07-16
GB1517925A (en) 1978-07-19
JPS5157292A (enrdf_load_stackoverflow) 1976-05-19
IT1042648B (it) 1980-01-30
BE833631A (fr) 1976-03-19
SE415415B (sv) 1980-09-29
CH601895A5 (enrdf_load_stackoverflow) 1978-07-14
DK422975A (da) 1976-03-21

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Legal Events

Date Code Title Description
ST Notification of lapse