FR2294246A1 - Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat - Google Patents

Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat

Info

Publication number
FR2294246A1
FR2294246A1 FR7441079A FR7441079A FR2294246A1 FR 2294246 A1 FR2294246 A1 FR 2294246A1 FR 7441079 A FR7441079 A FR 7441079A FR 7441079 A FR7441079 A FR 7441079A FR 2294246 A1 FR2294246 A1 FR 2294246A1
Authority
FR
France
Prior art keywords
layers
substrate
polarisation
neutron
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7441079A
Other languages
English (en)
French (fr)
Other versions
FR2294246B1 (OSRAM
Inventor
Guy Gautherin
Claude Lejeune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7441079A priority Critical patent/FR2294246A1/fr
Publication of FR2294246A1 publication Critical patent/FR2294246A1/fr
Application granted granted Critical
Publication of FR2294246B1 publication Critical patent/FR2294246B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
FR7441079A 1974-12-13 1974-12-13 Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat Granted FR2294246A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7441079A FR2294246A1 (fr) 1974-12-13 1974-12-13 Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7441079A FR2294246A1 (fr) 1974-12-13 1974-12-13 Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat

Publications (2)

Publication Number Publication Date
FR2294246A1 true FR2294246A1 (fr) 1976-07-09
FR2294246B1 FR2294246B1 (OSRAM) 1979-06-01

Family

ID=9146122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441079A Granted FR2294246A1 (fr) 1974-12-13 1974-12-13 Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat

Country Status (1)

Country Link
FR (1) FR2294246A1 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533944A1 (fr) * 1982-09-30 1984-04-06 Western Electric Co Procede de fabrication d'articles par depot en phase vapeur d'une matiere a constituants multiples
EP0141417A3 (en) * 1983-11-07 1987-03-25 Hitachi, Ltd. Method and apparatus for forming film by ion beam
WO1988010321A1 (en) * 1987-06-25 1988-12-29 University Of Houston-University Park Process for the deposition of diamond films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533944A1 (fr) * 1982-09-30 1984-04-06 Western Electric Co Procede de fabrication d'articles par depot en phase vapeur d'une matiere a constituants multiples
EP0141417A3 (en) * 1983-11-07 1987-03-25 Hitachi, Ltd. Method and apparatus for forming film by ion beam
WO1988010321A1 (en) * 1987-06-25 1988-12-29 University Of Houston-University Park Process for the deposition of diamond films

Also Published As

Publication number Publication date
FR2294246B1 (OSRAM) 1979-06-01

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Legal Events

Date Code Title Description
ST Notification of lapse