FR2294246B1 - - Google Patents
Info
- Publication number
- FR2294246B1 FR2294246B1 FR7441079A FR7441079A FR2294246B1 FR 2294246 B1 FR2294246 B1 FR 2294246B1 FR 7441079 A FR7441079 A FR 7441079A FR 7441079 A FR7441079 A FR 7441079A FR 2294246 B1 FR2294246 B1 FR 2294246B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7441079A FR2294246A1 (fr) | 1974-12-13 | 1974-12-13 | Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7441079A FR2294246A1 (fr) | 1974-12-13 | 1974-12-13 | Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2294246A1 FR2294246A1 (fr) | 1976-07-09 |
| FR2294246B1 true FR2294246B1 (OSRAM) | 1979-06-01 |
Family
ID=9146122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7441079A Granted FR2294246A1 (fr) | 1974-12-13 | 1974-12-13 | Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2294246A1 (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4483725A (en) * | 1982-09-30 | 1984-11-20 | At&T Bell Laboratories | Reactive vapor deposition of multiconstituent material |
| KR890002747B1 (ko) * | 1983-11-07 | 1989-07-26 | 가부시기가이샤 히다찌세이사꾸쇼 | 이온 빔에 의한 성막방법 및 그 장치 |
| US4822466A (en) * | 1987-06-25 | 1989-04-18 | University Of Houston - University Park | Chemically bonded diamond films and method for producing same |
-
1974
- 1974-12-13 FR FR7441079A patent/FR2294246A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2294246A1 (fr) | 1976-07-09 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |