FR2294246A1 - Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation - Google Patents
Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisationInfo
- Publication number
- FR2294246A1 FR2294246A1 FR7441079A FR7441079A FR2294246A1 FR 2294246 A1 FR2294246 A1 FR 2294246A1 FR 7441079 A FR7441079 A FR 7441079A FR 7441079 A FR7441079 A FR 7441079A FR 2294246 A1 FR2294246 A1 FR 2294246A1
- Authority
- FR
- France
- Prior art keywords
- layers
- substrate
- polarisation
- neutron
- electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
Abstract
A process and device are described for epitaxially forming layers on a substrate using a plasma contg. the ions to be deposited, the energy of which s controlled by varying the potential applied between the plasma source and the substrate. The neutral particles are removed by bending the beam of charged particles by electromagnetic induction and the electrons are electrostatically polarised near the substrate. Epitaxial layers with semiconducting, superconducting or optical properties can be produced e.g. in oscillatory diodes, diodes with variable capacitance, and light-modulating junctions. Twin layers for spectrography and electron diffraction can also be prepd. The layers can have compsns. not restricted by thermodynamic equilibria and can be defect free.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7441079A FR2294246A1 (en) | 1974-12-13 | 1974-12-13 | Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7441079A FR2294246A1 (en) | 1974-12-13 | 1974-12-13 | Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2294246A1 true FR2294246A1 (en) | 1976-07-09 |
FR2294246B1 FR2294246B1 (en) | 1979-06-01 |
Family
ID=9146122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7441079A Granted FR2294246A1 (en) | 1974-12-13 | 1974-12-13 | Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2294246A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2533944A1 (en) * | 1982-09-30 | 1984-04-06 | Western Electric Co | METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS |
EP0141417A2 (en) * | 1983-11-07 | 1985-05-15 | Hitachi, Ltd. | Apparatus for forming film by ion beam |
WO1988010321A1 (en) * | 1987-06-25 | 1988-12-29 | University Of Houston-University Park | Process for the deposition of diamond films |
-
1974
- 1974-12-13 FR FR7441079A patent/FR2294246A1/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2533944A1 (en) * | 1982-09-30 | 1984-04-06 | Western Electric Co | METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS |
EP0141417A2 (en) * | 1983-11-07 | 1985-05-15 | Hitachi, Ltd. | Apparatus for forming film by ion beam |
EP0141417A3 (en) * | 1983-11-07 | 1987-03-25 | Hitachi, Ltd. | Method and apparatus for forming film by ion beam |
WO1988010321A1 (en) * | 1987-06-25 | 1988-12-29 | University Of Houston-University Park | Process for the deposition of diamond films |
Also Published As
Publication number | Publication date |
---|---|
FR2294246B1 (en) | 1979-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |