FR2294246A1 - Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation - Google Patents

Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation

Info

Publication number
FR2294246A1
FR2294246A1 FR7441079A FR7441079A FR2294246A1 FR 2294246 A1 FR2294246 A1 FR 2294246A1 FR 7441079 A FR7441079 A FR 7441079A FR 7441079 A FR7441079 A FR 7441079A FR 2294246 A1 FR2294246 A1 FR 2294246A1
Authority
FR
France
Prior art keywords
layers
substrate
polarisation
neutron
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7441079A
Other languages
French (fr)
Other versions
FR2294246B1 (en
Inventor
Guy Gautherin
Claude Lejeune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7441079A priority Critical patent/FR2294246A1/en
Publication of FR2294246A1 publication Critical patent/FR2294246A1/en
Application granted granted Critical
Publication of FR2294246B1 publication Critical patent/FR2294246B1/fr
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/08Epitaxial-layer growth by condensing ionised vapours

Abstract

A process and device are described for epitaxially forming layers on a substrate using a plasma contg. the ions to be deposited, the energy of which s controlled by varying the potential applied between the plasma source and the substrate. The neutral particles are removed by bending the beam of charged particles by electromagnetic induction and the electrons are electrostatically polarised near the substrate. Epitaxial layers with semiconducting, superconducting or optical properties can be produced e.g. in oscillatory diodes, diodes with variable capacitance, and light-modulating junctions. Twin layers for spectrography and electron diffraction can also be prepd. The layers can have compsns. not restricted by thermodynamic equilibria and can be defect free.
FR7441079A 1974-12-13 1974-12-13 Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation Granted FR2294246A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7441079A FR2294246A1 (en) 1974-12-13 1974-12-13 Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7441079A FR2294246A1 (en) 1974-12-13 1974-12-13 Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation

Publications (2)

Publication Number Publication Date
FR2294246A1 true FR2294246A1 (en) 1976-07-09
FR2294246B1 FR2294246B1 (en) 1979-06-01

Family

ID=9146122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441079A Granted FR2294246A1 (en) 1974-12-13 1974-12-13 Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation

Country Status (1)

Country Link
FR (1) FR2294246A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533944A1 (en) * 1982-09-30 1984-04-06 Western Electric Co METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS
EP0141417A2 (en) * 1983-11-07 1985-05-15 Hitachi, Ltd. Apparatus for forming film by ion beam
WO1988010321A1 (en) * 1987-06-25 1988-12-29 University Of Houston-University Park Process for the deposition of diamond films

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533944A1 (en) * 1982-09-30 1984-04-06 Western Electric Co METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS
EP0141417A2 (en) * 1983-11-07 1985-05-15 Hitachi, Ltd. Apparatus for forming film by ion beam
EP0141417A3 (en) * 1983-11-07 1987-03-25 Hitachi, Ltd. Method and apparatus for forming film by ion beam
WO1988010321A1 (en) * 1987-06-25 1988-12-29 University Of Houston-University Park Process for the deposition of diamond films

Also Published As

Publication number Publication date
FR2294246B1 (en) 1979-06-01

Similar Documents

Publication Publication Date Title
Carter The complete analytic extension of the Reissner-Nordström metric in the special case e2= m2
US3293331A (en) Method of forming replicas of contoured substrates
GB886393A (en) Semiconductor body formation
GB1417642A (en) Device for generating electromagnetic waves
GB1160895A (en) Coating Surfaces by Vapour Deposition
GB1532759A (en) Production of monocrystalline layers on substrates
FR2294246A1 (en) Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation
Williams et al. Alfvén wave propagation in bismuth: quantum oscillations of the Fermi surface
Joseph Ballistic demagnetizing factor in uniformly magnetized rectangular prisms
GB1002359A (en) Circuit fabrication
Fuller et al. Observations made on domain walls in thin films
GB1342544A (en) Method of forming glass layers
GB1051451A (en)
GB1034946A (en) Improved process for producing magnetic thin film elements and elements produced thereby
Anandan Quantum interference and the classical limit
GB982731A (en) Process for the production of electro-photographic plates
GB1232868A (en)
Abe et al. MAGNETIC FIELD DEPENDENCE OF ACOUSTOELECTRIC CURRENT OSCILLATION IN n‐InSb
GB1135189A (en) The outdoor high voltage insulator
JPS5669809A (en) Magnetic material and its manufacture
GB1237931A (en)
Freed N Representability of Fermion Density Matrices
GB1134965A (en) Improvements in "rapid vapor deposition"
GB1011987A (en) Improvements relating to magnetic storage apparatus
Sethia et al. The solar wind influences plasmasphere electron content

Legal Events

Date Code Title Description
ST Notification of lapse