FR2292333A1 - Procede de fabrication de dispositifs a semi-conducteurs - Google Patents

Procede de fabrication de dispositifs a semi-conducteurs

Info

Publication number
FR2292333A1
FR2292333A1 FR7535846A FR7535846A FR2292333A1 FR 2292333 A1 FR2292333 A1 FR 2292333A1 FR 7535846 A FR7535846 A FR 7535846A FR 7535846 A FR7535846 A FR 7535846A FR 2292333 A1 FR2292333 A1 FR 2292333A1
Authority
FR
France
Prior art keywords
substrate
layer
technological structure
prodn
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7535846A
Other languages
English (en)
French (fr)
Other versions
FR2292333B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STYAPAS STYAPONO
Original Assignee
STYAPAS STYAPONO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU742076968A external-priority patent/SU653647A1/ru
Priority claimed from SU7402076899A external-priority patent/SU521802A1/ru
Application filed by STYAPAS STYAPONO filed Critical STYAPAS STYAPONO
Publication of FR2292333A1 publication Critical patent/FR2292333A1/fr
Application granted granted Critical
Publication of FR2292333B1 publication Critical patent/FR2292333B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P76/40—
    • H10P14/60—
    • H10P14/61—
    • H10P32/141—
    • H10P32/171—
    • H10P50/283—

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7535846A 1974-11-25 1975-11-24 Procede de fabrication de dispositifs a semi-conducteurs Granted FR2292333A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU742076968A SU653647A1 (ru) 1974-11-25 1974-11-25 Способ формировани источника базы при изготовлении транзисторных структур
SU7402076899A SU521802A1 (ru) 1974-11-25 1974-11-25 Способ селективного формировани источника базы при изготовлении транзисторных структур

Publications (2)

Publication Number Publication Date
FR2292333A1 true FR2292333A1 (fr) 1976-06-18
FR2292333B1 FR2292333B1 (enExample) 1979-02-02

Family

ID=26665540

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7535846A Granted FR2292333A1 (fr) 1974-11-25 1975-11-24 Procede de fabrication de dispositifs a semi-conducteurs

Country Status (5)

Country Link
CS (1) CS180949B1 (enExample)
DD (1) DD121429A5 (enExample)
DE (1) DE2552641B2 (enExample)
FR (1) FR2292333A1 (enExample)
HU (1) HU172486B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede

Also Published As

Publication number Publication date
DD121429A5 (enExample) 1976-07-20
HU172486B (hu) 1978-09-28
CS180949B1 (en) 1978-02-28
FR2292333B1 (enExample) 1979-02-02
DE2552641B2 (de) 1979-03-29
DE2552641A1 (de) 1976-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse