FR2290035A1 - Procede de production de composants a semi-conducteurs - Google Patents

Procede de production de composants a semi-conducteurs

Info

Publication number
FR2290035A1
FR2290035A1 FR7533448A FR7533448A FR2290035A1 FR 2290035 A1 FR2290035 A1 FR 2290035A1 FR 7533448 A FR7533448 A FR 7533448A FR 7533448 A FR7533448 A FR 7533448A FR 2290035 A1 FR2290035 A1 FR 2290035A1
Authority
FR
France
Prior art keywords
production process
semiconductor components
components production
semiconductor
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7533448A
Other languages
English (en)
French (fr)
Other versions
FR2290035B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, BBC Brown Boveri AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Publication of FR2290035A1 publication Critical patent/FR2290035A1/fr
Application granted granted Critical
Publication of FR2290035B1 publication Critical patent/FR2290035B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
FR7533448A 1974-11-04 1975-10-31 Procede de production de composants a semi-conducteurs Granted FR2290035A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1471874A CH579827A5 (enExample) 1974-11-04 1974-11-04

Publications (2)

Publication Number Publication Date
FR2290035A1 true FR2290035A1 (fr) 1976-05-28
FR2290035B1 FR2290035B1 (enExample) 1979-07-06

Family

ID=4403272

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7533448A Granted FR2290035A1 (fr) 1974-11-04 1975-10-31 Procede de production de composants a semi-conducteurs

Country Status (5)

Country Link
US (1) US4046608A (enExample)
JP (1) JPS5168765A (enExample)
CH (1) CH579827A5 (enExample)
DE (1) DE2456438A1 (enExample)
FR (1) FR2290035A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
CN102117839B (zh) * 2010-01-05 2013-07-24 比亚迪股份有限公司 一种包含pn结的半导体电子器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2827436A (en) * 1956-01-16 1958-03-18 Bell Telephone Labor Inc Method of improving the minority carrier lifetime in a single crystal silicon body
FR1456384A (fr) * 1964-12-07 1966-10-21 Rca Corp Dispositifs semi-conducteurs et leurs procédés de fabrication
US3320103A (en) * 1962-08-03 1967-05-16 Int Standard Electric Corp Method of fabricating a semiconductor by out-diffusion

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1816082A1 (de) * 1968-12-20 1970-06-25 Siemens Ag Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium
US3914138A (en) * 1974-08-16 1975-10-21 Westinghouse Electric Corp Method of making semiconductor devices by single step diffusion

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2827436A (en) * 1956-01-16 1958-03-18 Bell Telephone Labor Inc Method of improving the minority carrier lifetime in a single crystal silicon body
US3320103A (en) * 1962-08-03 1967-05-16 Int Standard Electric Corp Method of fabricating a semiconductor by out-diffusion
FR1456384A (fr) * 1964-12-07 1966-10-21 Rca Corp Dispositifs semi-conducteurs et leurs procédés de fabrication

Also Published As

Publication number Publication date
CH579827A5 (enExample) 1976-09-15
DE2456438A1 (de) 1976-05-06
US4046608A (en) 1977-09-06
FR2290035B1 (enExample) 1979-07-06
JPS5168765A (en) 1976-06-14

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Legal Events

Date Code Title Description
ST Notification of lapse