FR2290035B1 - - Google Patents
Info
- Publication number
- FR2290035B1 FR2290035B1 FR7533448A FR7533448A FR2290035B1 FR 2290035 B1 FR2290035 B1 FR 2290035B1 FR 7533448 A FR7533448 A FR 7533448A FR 7533448 A FR7533448 A FR 7533448A FR 2290035 B1 FR2290035 B1 FR 2290035B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1471874A CH579827A5 (enExample) | 1974-11-04 | 1974-11-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2290035A1 FR2290035A1 (fr) | 1976-05-28 |
| FR2290035B1 true FR2290035B1 (enExample) | 1979-07-06 |
Family
ID=4403272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7533448A Granted FR2290035A1 (fr) | 1974-11-04 | 1975-10-31 | Procede de production de composants a semi-conducteurs |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4046608A (enExample) |
| JP (1) | JPS5168765A (enExample) |
| CH (1) | CH579827A5 (enExample) |
| DE (1) | DE2456438A1 (enExample) |
| FR (1) | FR2290035A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4138280A (en) * | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
| US4278476A (en) * | 1979-12-05 | 1981-07-14 | Westinghouse Electric Corp. | Method of making ion implanted reverse-conducting thyristor |
| JP3562588B2 (ja) * | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
| JP3193803B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
| CN102117839B (zh) * | 2010-01-05 | 2013-07-24 | 比亚迪股份有限公司 | 一种包含pn结的半导体电子器件 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2827436A (en) * | 1956-01-16 | 1958-03-18 | Bell Telephone Labor Inc | Method of improving the minority carrier lifetime in a single crystal silicon body |
| NL299036A (enExample) * | 1962-08-03 | |||
| US3356543A (en) * | 1964-12-07 | 1967-12-05 | Rca Corp | Method of decreasing the minority carrier lifetime by diffusion |
| DE1816082A1 (de) * | 1968-12-20 | 1970-06-25 | Siemens Ag | Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium |
| US3914138A (en) * | 1974-08-16 | 1975-10-21 | Westinghouse Electric Corp | Method of making semiconductor devices by single step diffusion |
-
1974
- 1974-11-04 CH CH1471874A patent/CH579827A5/xx not_active IP Right Cessation
- 1974-11-29 DE DE19742456438 patent/DE2456438A1/de active Pending
-
1975
- 1975-10-31 FR FR7533448A patent/FR2290035A1/fr active Granted
- 1975-10-31 JP JP50131340A patent/JPS5168765A/ja active Pending
- 1975-11-04 US US05/628,842 patent/US4046608A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2290035A1 (fr) | 1976-05-28 |
| CH579827A5 (enExample) | 1976-09-15 |
| DE2456438A1 (de) | 1976-05-06 |
| US4046608A (en) | 1977-09-06 |
| JPS5168765A (en) | 1976-06-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |