FR2285714A1 - Procede et dispositif pour la formation de couches epitaxiques - Google Patents
Procede et dispositif pour la formation de couches epitaxiquesInfo
- Publication number
- FR2285714A1 FR2285714A1 FR7522943A FR7522943A FR2285714A1 FR 2285714 A1 FR2285714 A1 FR 2285714A1 FR 7522943 A FR7522943 A FR 7522943A FR 7522943 A FR7522943 A FR 7522943A FR 2285714 A1 FR2285714 A1 FR 2285714A1
- Authority
- FR
- France
- Prior art keywords
- epitaxic
- layers
- forming
- forming epitaxic
- epitaxic layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/066—Injection or centrifugal force system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE742445146A DE2445146C3 (de) | 1974-09-20 | 1974-09-20 | Verfahren und Vorrichtung zur Ausbildung epitaktischer Schichten |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2285714A1 true FR2285714A1 (fr) | 1976-04-16 |
FR2285714B1 FR2285714B1 (fr) | 1978-09-29 |
Family
ID=5926387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7522943A Granted FR2285714A1 (fr) | 1974-09-20 | 1975-07-23 | Procede et dispositif pour la formation de couches epitaxiques |
Country Status (6)
Country | Link |
---|---|
US (1) | US4373988A (fr) |
JP (1) | JPS582200B2 (fr) |
DE (1) | DE2445146C3 (fr) |
FR (1) | FR2285714A1 (fr) |
GB (1) | GB1519478A (fr) |
NL (1) | NL168279C (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2421292A1 (fr) * | 1978-03-31 | 1979-10-26 | Ibm | Dispositif de fabrication d'elements semi-conducteurs a multicouches au moyen d'une epitaxie a phase liquide |
EP0137641A2 (fr) * | 1983-09-12 | 1985-04-17 | Melvin S. Cook | Croissance de cristal LPE rapide |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2842605C2 (de) * | 1978-09-29 | 1983-12-08 | Georg Dr. 8521 Langensendelbach Müller | Verfahren zum Herstellen von Kristallen hoher Kristallgüte |
JPS58188792A (ja) * | 1982-04-30 | 1983-11-04 | Sanshin Ind Co Ltd | 船外機等のプロペラ組立体 |
FR2566808B1 (fr) * | 1984-06-27 | 1986-09-19 | Mircea Andrei | Procede et reacteur de croissance epitaxiale en phase vapeur |
EP0220462B1 (fr) * | 1985-09-24 | 1990-09-19 | Sumitomo Electric Industries, Ltd. | Méthode de synthèse de nitrure de bore du système cubique |
US5326716A (en) * | 1986-02-11 | 1994-07-05 | Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
US4717688A (en) * | 1986-04-16 | 1988-01-05 | Siemens Aktiengesellschaft | Liquid phase epitaxy method |
US6375741B2 (en) | 1991-03-06 | 2002-04-23 | Timothy J. Reardon | Semiconductor processing spray coating apparatus |
US6716334B1 (en) | 1998-06-10 | 2004-04-06 | Novellus Systems, Inc | Electroplating process chamber and method with pre-wetting and rinsing capability |
US6099702A (en) | 1998-06-10 | 2000-08-08 | Novellus Systems, Inc. | Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability |
DE10241703A1 (de) * | 2002-09-09 | 2004-03-18 | Vishay Semiconductor Gmbh | Reaktor und Verfahren zur Flüssigphasenepitaxie |
US8668422B2 (en) * | 2004-08-17 | 2014-03-11 | Mattson Technology, Inc. | Low cost high throughput processing platform |
US20120027953A1 (en) * | 2010-07-28 | 2012-02-02 | Synos Technology, Inc. | Rotating Reactor Assembly for Depositing Film on Substrate |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1353571A (en) * | 1914-06-27 | 1920-09-21 | Elektrochemische Werke Gmbh | Method of and apparatus for forming large crystals |
US2459869A (en) * | 1946-08-10 | 1949-01-25 | Bell Telephone Labor Inc | Crystal growing apparatus |
US3335084A (en) * | 1964-03-16 | 1967-08-08 | Gen Electric | Method for producing homogeneous crystals of mixed semiconductive materials |
US3697330A (en) * | 1970-03-27 | 1972-10-10 | Sperry Rand Corp | Liquid epitaxy method and apparatus |
FR2086578A5 (fr) * | 1970-04-02 | 1971-12-31 | Labo Electronique Physique | |
US3713883A (en) * | 1970-05-27 | 1973-01-30 | Western Electric Co | Method of and apparatus for growing crystals from a solution |
US3873463A (en) * | 1972-02-23 | 1975-03-25 | Philips Corp | Method of and device for manufacturing substituted single crystals |
JPS4896461A (fr) * | 1972-03-24 | 1973-12-10 | ||
JPS4951180A (fr) * | 1972-09-19 | 1974-05-17 | ||
US3913212A (en) * | 1972-12-15 | 1975-10-21 | Bell Telephone Labor Inc | Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes |
-
1974
- 1974-09-20 DE DE742445146A patent/DE2445146C3/de not_active Expired
-
1975
- 1975-07-23 FR FR7522943A patent/FR2285714A1/fr active Granted
- 1975-09-18 JP JP50112193A patent/JPS582200B2/ja not_active Expired
- 1975-09-19 NL NLAANVRAGE7511096,A patent/NL168279C/xx not_active IP Right Cessation
- 1975-09-19 GB GB38580/75A patent/GB1519478A/en not_active Expired
-
1977
- 1977-11-09 US US05/849,944 patent/US4373988A/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2421292A1 (fr) * | 1978-03-31 | 1979-10-26 | Ibm | Dispositif de fabrication d'elements semi-conducteurs a multicouches au moyen d'une epitaxie a phase liquide |
EP0137641A2 (fr) * | 1983-09-12 | 1985-04-17 | Melvin S. Cook | Croissance de cristal LPE rapide |
EP0137641A3 (fr) * | 1983-09-12 | 1986-10-22 | Melvin S. Cook | Croissance de cristal LPE rapide |
Also Published As
Publication number | Publication date |
---|---|
GB1519478A (en) | 1978-07-26 |
DE2445146C3 (de) | 1979-03-08 |
NL168279B (nl) | 1981-10-16 |
DE2445146B2 (de) | 1978-07-13 |
NL168279C (nl) | 1982-03-16 |
JPS582200B2 (ja) | 1983-01-14 |
US4373988A (en) | 1983-02-15 |
FR2285714B1 (fr) | 1978-09-29 |
JPS5157162A (en) | 1976-05-19 |
NL7511096A (nl) | 1976-03-23 |
DE2445146A1 (de) | 1976-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |