FR2284193A1 - Redresseur semi-conducteur a conduction commandee perfectionne - Google Patents

Redresseur semi-conducteur a conduction commandee perfectionne

Info

Publication number
FR2284193A1
FR2284193A1 FR7527329A FR7527329A FR2284193A1 FR 2284193 A1 FR2284193 A1 FR 2284193A1 FR 7527329 A FR7527329 A FR 7527329A FR 7527329 A FR7527329 A FR 7527329A FR 2284193 A1 FR2284193 A1 FR 2284193A1
Authority
FR
France
Prior art keywords
regenerative
current
section
gate control
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7527329A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2284193A1 publication Critical patent/FR2284193A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
FR7527329A 1974-09-06 1975-09-05 Redresseur semi-conducteur a conduction commandee perfectionne Withdrawn FR2284193A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50389474A 1974-09-06 1974-09-06

Publications (1)

Publication Number Publication Date
FR2284193A1 true FR2284193A1 (fr) 1976-04-02

Family

ID=24003971

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527329A Withdrawn FR2284193A1 (fr) 1974-09-06 1975-09-05 Redresseur semi-conducteur a conduction commandee perfectionne

Country Status (7)

Country Link
JP (1) JPS5152282A (xx)
BE (1) BE833046A (xx)
DE (1) DE2538042A1 (xx)
FR (1) FR2284193A1 (xx)
IT (1) IT1041931B (xx)
NL (1) NL7510503A (xx)
SE (1) SE7509841L (xx)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428918A1 (fr) * 1978-06-14 1980-01-11 Gen Electric Thyristor a blocage par la gachette perfectionne
EP0241662A2 (de) * 1986-04-12 1987-10-21 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Abschaltbarer Thyristor
EP0341000A2 (en) * 1988-05-02 1989-11-08 General Electric Company Gated turn-off semiconductor device
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428918A1 (fr) * 1978-06-14 1980-01-11 Gen Electric Thyristor a blocage par la gachette perfectionne
EP0241662A2 (de) * 1986-04-12 1987-10-21 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Abschaltbarer Thyristor
EP0241662A3 (de) * 1986-04-12 1989-02-22 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Abschaltbarer Thyristor
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
EP0341000A2 (en) * 1988-05-02 1989-11-08 General Electric Company Gated turn-off semiconductor device
EP0341000A3 (en) * 1988-05-02 1990-08-01 General Electric Company Gated turn-off semiconductor device

Also Published As

Publication number Publication date
DE2538042A1 (de) 1976-03-25
BE833046A (nl) 1975-12-31
SE7509841L (sv) 1976-03-08
IT1041931B (it) 1980-01-10
JPS5152282A (en) 1976-05-08
NL7510503A (nl) 1976-03-09

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Legal Events

Date Code Title Description
ST Notification of lapse