BE833046A - Halfgeleidergelijkrichter - Google Patents

Halfgeleidergelijkrichter

Info

Publication number
BE833046A
BE833046A BE7000702A BE7000702A BE833046A BE 833046 A BE833046 A BE 833046A BE 7000702 A BE7000702 A BE 7000702A BE 7000702 A BE7000702 A BE 7000702A BE 833046 A BE833046 A BE 833046A
Authority
BE
Belgium
Prior art keywords
semi
conductor rectifier
rectifier
conductor
Prior art date
Application number
BE7000702A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE833046A publication Critical patent/BE833046A/nl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
BE7000702A 1974-09-06 1975-09-03 Halfgeleidergelijkrichter BE833046A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50389474A 1974-09-06 1974-09-06

Publications (1)

Publication Number Publication Date
BE833046A true BE833046A (nl) 1975-12-31

Family

ID=24003971

Family Applications (1)

Application Number Title Priority Date Filing Date
BE7000702A BE833046A (nl) 1974-09-06 1975-09-03 Halfgeleidergelijkrichter

Country Status (7)

Country Link
JP (1) JPS5152282A (nl)
BE (1) BE833046A (nl)
DE (1) DE2538042A1 (nl)
FR (1) FR2284193A1 (nl)
IT (1) IT1041931B (nl)
NL (1) NL7510503A (nl)
SE (1) SE7509841L (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
NL190389C (nl) * 1978-06-14 1994-02-01 Gen Electric Poort-uitschakelbare thyristor.
DE3612367A1 (de) * 1986-04-12 1987-10-15 Licentia Gmbh Abschaltbarer thyristor
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region

Also Published As

Publication number Publication date
DE2538042A1 (de) 1976-03-25
IT1041931B (it) 1980-01-10
FR2284193A1 (fr) 1976-04-02
JPS5152282A (en) 1976-05-08
SE7509841L (sv) 1976-03-08
NL7510503A (nl) 1976-03-09

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