IT1041931B - Raddrizzatore a semiconduttore commutabile allo stato di non conduzione per mezzo di una tensione applicata al proprio elettrodo di porta - Google Patents
Raddrizzatore a semiconduttore commutabile allo stato di non conduzione per mezzo di una tensione applicata al proprio elettrodo di portaInfo
- Publication number
- IT1041931B IT1041931B IT2658775A IT2658775A IT1041931B IT 1041931 B IT1041931 B IT 1041931B IT 2658775 A IT2658775 A IT 2658775A IT 2658775 A IT2658775 A IT 2658775A IT 1041931 B IT1041931 B IT 1041931B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive
- voltage applied
- conductive state
- door electrode
- rectifier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50389474A | 1974-09-06 | 1974-09-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1041931B true IT1041931B (it) | 1980-01-10 |
Family
ID=24003971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2658775A IT1041931B (it) | 1974-09-06 | 1975-08-26 | Raddrizzatore a semiconduttore commutabile allo stato di non conduzione per mezzo di una tensione applicata al proprio elettrodo di porta |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5152282A (nl) |
| BE (1) | BE833046A (nl) |
| DE (1) | DE2538042A1 (nl) |
| FR (1) | FR2284193A1 (nl) |
| IT (1) | IT1041931B (nl) |
| NL (1) | NL7510503A (nl) |
| SE (1) | SE7509841L (nl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
| NL190389C (nl) * | 1978-06-14 | 1994-02-01 | Gen Electric | Poort-uitschakelbare thyristor. |
| US4918509A (en) * | 1986-04-12 | 1990-04-17 | Licentia Patent-Verwaltungs-Gmbh | Gate turn-off thyristor |
| DE3612367A1 (de) * | 1986-04-12 | 1987-10-15 | Licentia Gmbh | Abschaltbarer thyristor |
| US4982258A (en) * | 1988-05-02 | 1991-01-01 | General Electric Company | Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
-
1975
- 1975-08-26 IT IT2658775A patent/IT1041931B/it active
- 1975-08-27 DE DE19752538042 patent/DE2538042A1/de active Pending
- 1975-09-03 BE BE7000702A patent/BE833046A/nl unknown
- 1975-09-04 JP JP10791575A patent/JPS5152282A/ja active Pending
- 1975-09-04 SE SE7509841A patent/SE7509841L/ unknown
- 1975-09-05 NL NL7510503A patent/NL7510503A/nl unknown
- 1975-09-05 FR FR7527329A patent/FR2284193A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE2538042A1 (de) | 1976-03-25 |
| NL7510503A (nl) | 1976-03-09 |
| FR2284193A1 (fr) | 1976-04-02 |
| SE7509841L (sv) | 1976-03-08 |
| JPS5152282A (en) | 1976-05-08 |
| BE833046A (nl) | 1975-12-31 |
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