FR2284189A1 - Procede de depot de materiau semi-conducteur polycristallin - Google Patents
Procede de depot de materiau semi-conducteur polycristallinInfo
- Publication number
- FR2284189A1 FR2284189A1 FR7429922A FR7429922A FR2284189A1 FR 2284189 A1 FR2284189 A1 FR 2284189A1 FR 7429922 A FR7429922 A FR 7429922A FR 7429922 A FR7429922 A FR 7429922A FR 2284189 A1 FR2284189 A1 FR 2284189A1
- Authority
- FR
- France
- Prior art keywords
- areas
- electron beam
- laser
- substrate
- epitaxial deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7429922A FR2284189A1 (fr) | 1974-09-03 | 1974-09-03 | Procede de depot de materiau semi-conducteur polycristallin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7429922A FR2284189A1 (fr) | 1974-09-03 | 1974-09-03 | Procede de depot de materiau semi-conducteur polycristallin |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2284189A1 true FR2284189A1 (fr) | 1976-04-02 |
FR2284189B1 FR2284189B1 (fr) | 1976-12-31 |
Family
ID=9142760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7429922A Granted FR2284189A1 (fr) | 1974-09-03 | 1974-09-03 | Procede de depot de materiau semi-conducteur polycristallin |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2284189A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2366693A1 (fr) * | 1976-09-29 | 1978-04-28 | Siemens Ag | Procede pour la formation d'une couche pourvue d'une structure sur un substrat |
US4198246A (en) * | 1978-11-27 | 1980-04-15 | Rca Corporation | Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film |
WO1982000385A1 (fr) * | 1980-07-21 | 1982-02-04 | Leland Stanford Junior Univ | Procede et moyen de contact et d'interconnexion par resistance de dispositifs semi-conducteurs |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1146943A (en) * | 1966-02-09 | 1969-03-26 | Sony Corp | Semiconductor device |
FR2030781A6 (fr) * | 1967-12-05 | 1970-11-13 | Sony Corp | Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus |
DE2056470A1 (en) * | 1970-11-17 | 1972-05-25 | Sack W | Selective semiconductor growth - on localised heated substrata |
FR2111854A1 (fr) * | 1970-10-27 | 1972-06-09 | Siemens Ag |
-
1974
- 1974-09-03 FR FR7429922A patent/FR2284189A1/fr active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1146943A (en) * | 1966-02-09 | 1969-03-26 | Sony Corp | Semiconductor device |
FR2030781A6 (fr) * | 1967-12-05 | 1970-11-13 | Sony Corp | Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus |
FR2111854A1 (fr) * | 1970-10-27 | 1972-06-09 | Siemens Ag | |
DE2056470A1 (en) * | 1970-11-17 | 1972-05-25 | Sack W | Selective semiconductor growth - on localised heated substrata |
Non-Patent Citations (1)
Title |
---|
REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN" VOL. 16, FEVRIER 1974, "DOPED POLYSILICON ISOLATION PROCESS", A.K. GAIND ET AL, PAGE 2871 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2366693A1 (fr) * | 1976-09-29 | 1978-04-28 | Siemens Ag | Procede pour la formation d'une couche pourvue d'une structure sur un substrat |
US4198246A (en) * | 1978-11-27 | 1980-04-15 | Rca Corporation | Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film |
WO1982000385A1 (fr) * | 1980-07-21 | 1982-02-04 | Leland Stanford Junior Univ | Procede et moyen de contact et d'interconnexion par resistance de dispositifs semi-conducteurs |
Also Published As
Publication number | Publication date |
---|---|
FR2284189B1 (fr) | 1976-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |