FR2274141A1 - Procede de traitement d'une couche de bioxyde de silicium - Google Patents

Procede de traitement d'une couche de bioxyde de silicium

Info

Publication number
FR2274141A1
FR2274141A1 FR7517620A FR7517620A FR2274141A1 FR 2274141 A1 FR2274141 A1 FR 2274141A1 FR 7517620 A FR7517620 A FR 7517620A FR 7517620 A FR7517620 A FR 7517620A FR 2274141 A1 FR2274141 A1 FR 2274141A1
Authority
FR
France
Prior art keywords
treating
layer
bioxide
silicon
silicon bioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7517620A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2274141A1 publication Critical patent/FR2274141A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H10D64/0134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/20—
FR7517620A 1974-06-06 1975-06-05 Procede de traitement d'une couche de bioxyde de silicium Withdrawn FR2274141A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05476837 USB476837I5 (cg-RX-API-DMAC10.html) 1974-06-06 1974-06-06

Publications (1)

Publication Number Publication Date
FR2274141A1 true FR2274141A1 (fr) 1976-01-02

Family

ID=23893457

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7517620A Withdrawn FR2274141A1 (fr) 1974-06-06 1975-06-05 Procede de traitement d'une couche de bioxyde de silicium

Country Status (5)

Country Link
US (1) USB476837I5 (cg-RX-API-DMAC10.html)
JP (1) JPS516475A (cg-RX-API-DMAC10.html)
DE (1) DE2524750C3 (cg-RX-API-DMAC10.html)
FR (1) FR2274141A1 (cg-RX-API-DMAC10.html)
GB (1) GB1458327A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826051A (ja) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd アルカリ拡散防止酸化ケイ素膜の形成されたガラス体
DE3208087A1 (de) * 1982-03-06 1983-09-15 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren zur passivierung von halbleitern
JPS61164266A (ja) * 1985-01-16 1986-07-24 Nec Corp 耐放射線性の強化された半導体装置
EP0562625B1 (en) * 1992-03-27 1997-06-04 Matsushita Electric Industrial Co., Ltd. A semiconductor device and process

Also Published As

Publication number Publication date
JPS5340872B2 (cg-RX-API-DMAC10.html) 1978-10-30
USB476837I5 (cg-RX-API-DMAC10.html) 1976-01-20
DE2524750A1 (de) 1975-12-18
DE2524750C3 (de) 1979-02-22
DE2524750B2 (de) 1978-06-15
JPS516475A (en) 1976-01-20
GB1458327A (en) 1976-12-15

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Legal Events

Date Code Title Description
ST Notification of lapse