JPS5340872B2 - - Google Patents
Info
- Publication number
- JPS5340872B2 JPS5340872B2 JP6597275A JP6597275A JPS5340872B2 JP S5340872 B2 JPS5340872 B2 JP S5340872B2 JP 6597275 A JP6597275 A JP 6597275A JP 6597275 A JP6597275 A JP 6597275A JP S5340872 B2 JPS5340872 B2 JP S5340872B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10D64/0134—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/20—
Landscapes
- Formation Of Insulating Films (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Insulating Materials (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05476837 USB476837I5 (cg-RX-API-DMAC10.html) | 1974-06-06 | 1974-06-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS516475A JPS516475A (en) | 1976-01-20 |
| JPS5340872B2 true JPS5340872B2 (cg-RX-API-DMAC10.html) | 1978-10-30 |
Family
ID=23893457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50065972A Granted JPS516475A (en) | 1974-06-06 | 1975-05-30 | 2sankashirikonhimakunoshoriho |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | USB476837I5 (cg-RX-API-DMAC10.html) |
| JP (1) | JPS516475A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2524750C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2274141A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1458327A (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826051A (ja) * | 1981-08-06 | 1983-02-16 | Asahi Glass Co Ltd | アルカリ拡散防止酸化ケイ素膜の形成されたガラス体 |
| DE3208087A1 (de) * | 1982-03-06 | 1983-09-15 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Verfahren zur passivierung von halbleitern |
| JPS61164266A (ja) * | 1985-01-16 | 1986-07-24 | Nec Corp | 耐放射線性の強化された半導体装置 |
| EP0562625B1 (en) * | 1992-03-27 | 1997-06-04 | Matsushita Electric Industrial Co., Ltd. | A semiconductor device and process |
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1974
- 1974-06-06 US US05476837 patent/USB476837I5/en active Pending
-
1975
- 1975-05-15 GB GB2060575A patent/GB1458327A/en not_active Expired
- 1975-05-30 JP JP50065972A patent/JPS516475A/ja active Granted
- 1975-06-04 DE DE2524750A patent/DE2524750C3/de not_active Expired
- 1975-06-05 FR FR7517620A patent/FR2274141A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| USB476837I5 (cg-RX-API-DMAC10.html) | 1976-01-20 |
| FR2274141A1 (fr) | 1976-01-02 |
| DE2524750A1 (de) | 1975-12-18 |
| DE2524750C3 (de) | 1979-02-22 |
| DE2524750B2 (de) | 1978-06-15 |
| JPS516475A (en) | 1976-01-20 |
| GB1458327A (en) | 1976-12-15 |