FR2261809A1 - n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity - Google Patents
n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivityInfo
- Publication number
- FR2261809A1 FR2261809A1 FR7406598A FR7406598A FR2261809A1 FR 2261809 A1 FR2261809 A1 FR 2261809A1 FR 7406598 A FR7406598 A FR 7406598A FR 7406598 A FR7406598 A FR 7406598A FR 2261809 A1 FR2261809 A1 FR 2261809A1
- Authority
- FR
- France
- Prior art keywords
- gasb
- contg
- mfr
- sulphur
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 title abstract 2
- 239000005864 Sulphur Substances 0.000 title abstract 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 title abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- 230000001747 exhibiting effect Effects 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 229910005542 GaSb Inorganic materials 0.000 abstract 6
- 238000002425 crystallisation Methods 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 238000007792 addition Methods 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000004075 alteration Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003111 delayed effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7406598A FR2261809A1 (en) | 1974-02-27 | 1974-02-27 | n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7406598A FR2261809A1 (en) | 1974-02-27 | 1974-02-27 | n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2261809A1 true FR2261809A1 (en) | 1975-09-19 |
FR2261809B1 FR2261809B1 (enrdf_load_html_response) | 1976-10-08 |
Family
ID=9135504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7406598A Granted FR2261809A1 (en) | 1974-02-27 | 1974-02-27 | n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2261809A1 (enrdf_load_html_response) |
-
1974
- 1974-02-27 FR FR7406598A patent/FR2261809A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2261809B1 (enrdf_load_html_response) | 1976-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |