GB1173690A - Method for Growing Single Crystals. - Google Patents

Method for Growing Single Crystals.

Info

Publication number
GB1173690A
GB1173690A GB52436/67A GB5243667A GB1173690A GB 1173690 A GB1173690 A GB 1173690A GB 52436/67 A GB52436/67 A GB 52436/67A GB 5243667 A GB5243667 A GB 5243667A GB 1173690 A GB1173690 A GB 1173690A
Authority
GB
United Kingdom
Prior art keywords
furnace
salt
tube
nov
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52436/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Hayakawa Denki Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hayakawa Denki Kogyo KK filed Critical Hayakawa Denki Kogyo KK
Publication of GB1173690A publication Critical patent/GB1173690A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,173,690. Progressive freezing. HAYAKAWA DENKI KOGYO K.K. 17 Nov., 1967 [18 Nov., 1966], No. 52436/67. Heading BIS. [Also in Division C1] An inorganic metal salt having a solidsolid tp (transition point) is progressively crystallized as a single crystal in the form stable below the tp by passing through. a three-part furnace, the first part being at a temperature above the mp, the middle part being at a temperature between the mp and the tp, and the last part being at a temperature below the tp. The salt is contained in a quartz glass tube having an inner carbon coating. The tube may be shorter or longer than the middle part of the furnace. The lower part of the tube may be of the shape shown. The salt may be cuprous chloride, bromide, or iodide; or cadmium or zinc sulphide. In the case of cuprous chloride, passage may be at 0.5 mm/hr and the length of the middle part of the furnace may be 1 cm.
GB52436/67A 1966-11-18 1967-11-17 Method for Growing Single Crystals. Expired GB1173690A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7587866 1966-11-18

Publications (1)

Publication Number Publication Date
GB1173690A true GB1173690A (en) 1969-12-10

Family

ID=13588963

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52436/67A Expired GB1173690A (en) 1966-11-18 1967-11-17 Method for Growing Single Crystals.

Country Status (2)

Country Link
US (1) US3607137A (en)
GB (1) GB1173690A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242307A (en) * 1978-07-11 1980-12-30 Societe Anonyme Dite: Compagnie Generale D'electricite Device for producing polycrystalline silicon
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5248377A (en) * 1989-12-01 1993-09-28 Grumman Aerospace Corporation Crystal-growth furnace for interface curvature control

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US3894846A (en) * 1973-02-07 1975-07-15 Hitachi Ltd Method of producing single crystals of gadolinium molybdate family
US4181515A (en) * 1974-09-24 1980-01-01 The Post Office Method of making dielectric optical waveguides
US4264406A (en) * 1979-06-11 1981-04-28 The United States Of America As Represented By The Secretary Of The Army Method for growing crystals
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US4687538A (en) * 1985-04-12 1987-08-18 Hughes Aircraft Company Method for growing single crystals of thermally unstable ferroelectric materials
US4847053A (en) * 1987-05-05 1989-07-11 Hughes Aircraft Company Growth of glass-clad single crystal fibers
CN102191546A (en) * 2010-03-08 2011-09-21 宁波大学 The method of cuprous chloride crystal growth
CN112663132A (en) * 2020-11-13 2021-04-16 宁波大学 Preparation method of cuprous halide crystal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
US3340016A (en) * 1963-09-26 1967-09-05 Consortium Elektrochem Ind Producing and regulating translatory movement in the manufacture of semiconductor bodies
US3273969A (en) * 1963-12-05 1966-09-20 Philco Corp Apparatus for growing fluoride crystals
NL131984C (en) * 1964-06-02 1900-01-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242307A (en) * 1978-07-11 1980-12-30 Societe Anonyme Dite: Compagnie Generale D'electricite Device for producing polycrystalline silicon
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5248377A (en) * 1989-12-01 1993-09-28 Grumman Aerospace Corporation Crystal-growth furnace for interface curvature control

Also Published As

Publication number Publication date
US3607137A (en) 1971-09-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years