FR2261809A1 - n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity - Google Patents

n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity

Info

Publication number
FR2261809A1
FR2261809A1 FR7406598A FR7406598A FR2261809A1 FR 2261809 A1 FR2261809 A1 FR 2261809A1 FR 7406598 A FR7406598 A FR 7406598A FR 7406598 A FR7406598 A FR 7406598A FR 2261809 A1 FR2261809 A1 FR 2261809A1
Authority
FR
France
Prior art keywords
gasb
contg
mfr
sulphur
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7406598A
Other languages
English (en)
French (fr)
Other versions
FR2261809B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZ TEKHN I
Original Assignee
FIZ TEKHN I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZ TEKHN I filed Critical FIZ TEKHN I
Priority to FR7406598A priority Critical patent/FR2261809A1/fr
Publication of FR2261809A1 publication Critical patent/FR2261809A1/fr
Application granted granted Critical
Publication of FR2261809B1 publication Critical patent/FR2261809B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
FR7406598A 1974-02-27 1974-02-27 n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity Granted FR2261809A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7406598A FR2261809A1 (en) 1974-02-27 1974-02-27 n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7406598A FR2261809A1 (en) 1974-02-27 1974-02-27 n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity

Publications (2)

Publication Number Publication Date
FR2261809A1 true FR2261809A1 (en) 1975-09-19
FR2261809B1 FR2261809B1 (OSRAM) 1976-10-08

Family

ID=9135504

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7406598A Granted FR2261809A1 (en) 1974-02-27 1974-02-27 n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity

Country Status (1)

Country Link
FR (1) FR2261809A1 (OSRAM)

Also Published As

Publication number Publication date
FR2261809B1 (OSRAM) 1976-10-08

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Legal Events

Date Code Title Description
ST Notification of lapse